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Nexperia NPN General-Purpose Transistor, Maximum DC Collector Current 100 mA, Collector Emitter Voltage 45 V BC847BW,115

Category Bipolar Transistors Brand Nexperia Condition New

Specifications

Country of Origin India
Brand Nexperia
Height 0.95mm
Length 2.2mm
Model BC847BW,115
Width 1.35mm
Mount Type Surface
Series BC847
Maximum Operating Temperature 150°C
Package Type UMT
Minimum Operating Temperature -65°C
Standards/Approvals RoHS
Pin Count 3
Maximum Collector Emitter Voltage Vceo 45V
Minimum DC Current Gain hFE 200
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 6V
Maximum Collector Base Voltage VCBO 50V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 200mW
Maximum DC Collector Current Idc 100mA
Transistor Configuration Single
Maximum Transition Frequency ft 100MHz

Key Features

  • Rated for a maximum collector emitter voltage of 45 V ensuring medium voltage applications.
  • Surface mount transistor configuration with 3 pins suited for dense PCB layouts.
  • Maximum power dissipation of 200 mW supports efficient heat management.
  • HFE gain of minimum 200 guarantees reliable amplification properties.
  • Operating temperature range from -65 °C to 150 °C allows for diverse environmental conditions.
  • Package dimensions approximately 2.2 mm length, 1.35 mm width, and 0.95 mm height.
  • Compliance with RoHS and automotive AEC-Q101 standard ensures reliability and environmental safety.
  • Maximum transition frequency of 100 MHz suitable for high-frequency circuits.

Product Description

The Nexperia BC847BW,115 transistor is a robust NPN bipolar junction transistor designed for general-purpose amplification and switching applications. It features a maximum DC collector current of 100 mA with a collector emitter voltage rating of 45 V, offering versatility across numerous electronic circuits.

Packaged in a 3-pin UMT surface mount plastic case, this transistor enables compact implementations on printed circuit boards, ideal for modern electronic device manufacturing. Its high minimum DC current gain (hFE) of 200 facilitates efficient signal amplification, while the maximum power dissipation of 200 mW ensures moderate power handling capacity.

The device operates reliably over an ambient temperature range from -65 °C to 150 °C, making it suitable for industrial and automotive environments. It is certified to meet strict RoHS environmental standards and is qualified under the automotive AEC-Q101 standard, confirming its suitability for automotive electronics where durability and quality are critical.

Physical dimensions are compact with a length of 2.2 mm, width of 1.35 mm, and height of 0.95 mm, allowing for dense circuit integration without compromising on performance. The transistor's maximum transition frequency of 100 MHz supports use in RF and high-frequency switching applications.

Rated maximum collector emitter voltage of 45 V for versatile circuit compatibility. Maximum DC collector current of 100 mA for general power switching. Surface mount 3-pin UMT package designed for compact PCB layouts. High DC current gain ensures efficient amplification.

Wide operating temperature range supports various environmental conditions. Compliant with RoHS and AEC-Q101 automotive standards for safety and performance. Maximum power dissipation of 200 mW promotes reliable thermal operation.

Compact physical size for space-saving design. Maximum transition frequency up to 100 MHz suitable for RF applications.

This transistor is well-suited for use in industrial electronics, automotive control systems, communication devices, power control, and general switching applications, delivering dependable performance with quality approvals.

Explore more semiconductor components and Bipolar Transistors in the Electronics & Electricals category at EnvMart to meet your project needs with trusted brands like Nexperia.

Nexperia NPN General-Purpose Transistor, Maximum DC Collector Current 100 mA, Collector Emitter Voltage 45 V BC847BW,115
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Frequently Asked Questions

The maximum DC collector current for this transistor is 100 mA.

It has a collector emitter voltage rating of 45 V.

The operating temperature range is from -65 °C to 150 °C.

This model is packaged in a UMT type with dimensions of approximately 2.2 mm in length, 1.35 mm in width, and 0.95 mm in height.

The minimum DC current gain (hFE) is 200, ensuring reliable amplification properties.

The maximum power dissipation is 200 mW, which supports efficient heat management.

It complies with the automotive AEC-Q101 standard, ensuring suitability for automotive applications.

Yes, it is compliant with RoHS environmental standards.

The maximum transition frequency is 100 MHz, making it suitable for high-frequency circuits.

This transistor has a 3-pin configuration, designed for surface mount applications.

The maximum emitter base voltage (VEBO) is 6 V.

It is suitable for general-purpose amplification and switching applications in various electronic circuits.

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