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Nexperia Bipolar Transistor NPN+PNP 100 mA 45 V Surface Mount SOT-363 6-Pin PMP5201Y,115

Category Bipolar Transistors Brand Nexperia Condition New

Specifications

Country of Origin Malaysia
Brand Nexperia
Height 1.1mm
Length 2.2mm
Model PMP5201Y,115
Width 2.2mm
Mount Type Surface
Series PMP5201Y
Maximum Operating Temperature 150°C
Package Type SOT-363
Minimum Operating Temperature -65°C
Standards/Approvals RoHS
Pin Count 6
Maximum Collector Emitter Voltage Vceo 45V
Minimum DC Current Gain hFE 200
Transistor Polarity NPN + PNP
Maximum Emitter Base Voltage VEBO -5V
Maximum Collector Base Voltage VCBO -50V
Maximum Power Dissipation Pd 300mW
Maximum DC Collector Current Idc 100mA
Transistor Configuration Isolated
Maximum Transition Frequency ft 100MHz

Key Features

  • 6-pin SOT-363 surface-mount package for compact PCB designs.
  • Maximum power dissipation of 300 mW supporting efficient operation.
  • High minimum DC current gain (hFE) of 200 for better amplification.
  • Wide operating temperature range from -65°C to 150°C suitable for diverse environments.
  • Maximum transition frequency of 100 MHz ideal for high-frequency applications.
  • Pin count of 6 enabling dual transistor functionality in one package.
  • Isolated transistor configuration ensuring minimal interference between transistors.
  • Compact dimensions approximately 2.2 mm length and width, 1.1 mm height.

Product Description

Nexperia PMP5201Y,115 is a dual NPN and PNP bipolar transistor designed for surface mount applications in electronic circuits. It supports a maximum DC collector current of 100 mA and a maximum collector emitter voltage of 45 V, making it suitable for switching and amplification tasks within various industrial electronic equipment.

Packaged in a 6-pin SOT-363 surface mount package, this transistor optimizes space usage on PCBs while delivering reliable performance. The transistor features an isolated configuration to reduce cross-talk and interference, enhancing circuit stability and efficiency.

It has a maximum power dissipation rating of 300 mW, which permits robust operation under moderate loads. The transistor exhibits a minimum DC current gain (hFE) of 200, providing strong amplification capabilities. Its high transition frequency of 100 MHz makes it suitable for applications that require rapid switching and signal processing, including communications and control circuits.

The device operates over an extended temperature range from -65°C to +150°C, enabling usage in industrial, automotive, and rugged commercial environments. Its dimensions (2.2 mm length and width, 1.1 mm height) allow compact design integration in densely packed electronic assemblies.

Nexperia PMP5201Y,115 is RoHS compliant, meeting environmental directives to reduce hazardous substances. Made in Malaysia, it ensures consistent manufacturing quality and traceability.

6-pin SOT-363 surface mount package for compact designs. Dual NPN and PNP transistor configuration in one device. 100 mA maximum DC collector current for moderate load handling. 45 V maximum collector emitter voltage suitable for various circuits.

300 mW power dissipation rating for reliable performance. Minimum DC current gain of 200 for strong amplification. Wide operating temperature range from -65°C to +150°C. High transition frequency of 100 MHz for fast switching.

Isolated configuration reducing interference. Compact dimensions enable dense PCB layouts. RoHS compliant for environmental safety. Manufactured in Malaysia ensuring quality.

This bipolar transistor set is ideal for electronics manufacturing, industrial control systems, automotive circuits, and general electronic device assembly. It enables efficient design of amplifiers, switches, and signal processors in compact form factors.

Explore our range of Bipolar Transistors and related semiconductor components in the Electronics & Electricals category on EnvMart for tailored industrial and commercial solutions.

Nexperia Bipolar Transistor NPN+PNP 100 mA 45 V Surface Mount SOT-363 6-Pin PMP5201Y,115
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Frequently Asked Questions

The maximum DC collector current for this model is 100 mA, allowing it to handle moderate load applications effectively.

This transistor supports a maximum collector-emitter voltage of 45 V, making it suitable for various circuit applications.

It has a maximum power dissipation rating of 300 mW, which permits reliable operation under moderate loads.

The minimum DC current gain (hFE) is 200, providing strong amplification capabilities for electronic circuits.

The maximum transition frequency is 100 MHz, making it suitable for high-frequency applications such as signal processing.

The dimensions of the SOT-363 package are approximately 2.2 mm in length and width, and 1.1 mm in height, allowing for compact PCB designs.

It operates over a wide temperature range from -65°C to +150°C, suitable for diverse environments including industrial and automotive applications.

This model features an isolated transistor configuration, which reduces interference and enhances circuit stability.

Yes, this transistor is RoHS compliant, meeting environmental directives to reduce hazardous substances.

The transistor has a pin count of 6, enabling dual NPN and PNP functionality in one package.

The maximum emitter-base voltage (VEBO) is -5 V, which is important for ensuring proper operation within specified limits.

This bipolar transistor is suitable for applications in electronics manufacturing, industrial control systems, automotive circuits, and general electronic device assembly.

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