Nexperia High Voltage NPN Transistor 1A Collector Current 400V Vceo 4-Pin SOT-223 PBHV8140Z,115

The Nexperia PBHV8140Z,115 is a high voltage NPN bipolar transistor engineered for demanding electronic circuits requiring up to 1 ampere collector current and a maximum collector-emitter voltage of 400 volts. This transistor is housed in a 4-pin SOT-223 surface-mount package, optimized for compact PCB layouts and improved thermal dissipation.

It features a maximum collector base voltage of 500 volts and a maximum power dissipation of 1.45 milliwatts, allowing it to handle substantial power loads efficiently. The device is rated for operation across an extensive temperature range from -55°C to 150°C, ensuring stable performance in extreme industrial and automotive conditions.

With a minimum DC current gain (hFE) of 100 and transition frequency of 25 MHz, the PBHV8140Z,115 transistor is suitable for high-frequency switching and amplification applications. This product complies with the RoHS directive and meets the stringent AEC-Q101 automotive quality standard, emphasizing its reliability and environmental compliance.

The transistor's compact physical dimensions of 6.7 mm length, 3.7 mm width, and 1.8 mm height facilitate versatile integration into power management, industrial control, and automotive electronic circuits.

Features a 4-pin SOT-223 surface mount package for efficient PCB integration. Maximum collector base voltage of 500 V for reliable performance. Capable of dissipating 1.45 mW power ensuring good thermal management. Operating temperature range from -55°C to 150°C suitable for harsh environments.

Minimum DC current gain (hFE) of 100 enhances amplification efficiency. High frequency operation up to 25 MHz supports switching applications. Compliance with RoHS and automotive AEC-Q101 standards guarantees quality and reliability.

Compact dimensions: Length 6.7 mm, Width 3.7 mm, Height 1.8 mm.

This transistor is ideal for industrial power electronics, automotive electronic systems, and general-purpose high voltage switching applications. Its robust electrical characteristics and compliance with automotive standards make it suitable for embedded and discrete power transistor implementations.

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