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Nexperia Transistor PNP 600 mA, 60 V, 3-Pin SOT-89 PXT2907A,115

Category Bipolar Transistors Brand Nexperia Condition New

Specifications

Country of Origin India
Brand Nexperia
Height 1.5mm
Length 4.6mm
Model PXT2907A,115
Width 2.5mm
Mount Type Surface
Series PXT2907A
Maximum Operating Temperature 150°C
Package Type SOT-89
Minimum Operating Temperature -65°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo -60V
Minimum DC Current Gain hFE 50
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO -5V
Maximum Collector Base Voltage VCBO -60V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 1.1W
Maximum DC Collector Current Idc -600mA
Transistor Configuration Single
onsemi PZT2907AT1G Bipolar Transistor, -600 mA PNP, -60 V, 4-Pin SOT-223Brand onsemi

Key Features

  • Designed for surface mount applications with a 3-pin SOT-89 package.
  • Offers a maximum power dissipation of 1.1 W for reliable operation.
  • Operates efficiently within a temperature range of -65°C to 150°C.
  • Minimum DC current gain (hFE) is rated at 50, ensuring good amplification characteristics.
  • Meets Automotive Standard AEC-Q101 for quality and reliability in automotive applications.
  • Compact dimensions of 4.6 mm length, 2.5 mm width, and 1.5 mm height.
  • Single transistor configuration with PNP polarity for versatile circuit design.

Product Description

The Nexperia PXT2907A,115 is a general-purpose PNP bipolar transistor designed for surface mount technology using a 3-pin SOT-89 package. It supports a maximum collector current of 600 mA and can handle collector-emitter voltages up to 60 V, making it suitable for medium power switching and amplification tasks in various electronic circuits.

This transistor offers a maximum power dissipation rating of 1.1 W and a minimum DC current gain (hFE) of 50, providing effective performance and amplification within a compact form factor measuring 4.6 mm in length, 2.5 mm in width, and 1.5 mm in height.

Operating temperature limits range from -65°C to 150°C, allowing it to function reliably under harsh environmental conditions. It meets the automotive AEC-Q101 standard, ensuring high quality and robustness for automotive and industrial applications.

The device's PNP polarity and single transistor configuration make it suitable for signal switching, amplification, and general-purpose use in circuits requiring reliable bipolar transistor performance.

This transistor is typically used in industrial electronics, automotive systems, power management, and testing setups, offering consistent electrical characteristics and compliance with modern semiconductor standards.

Designed for surface mount applications with a 3-pin SOT-89 package. Offers a maximum power dissipation of 1.1 W for reliable operation. Operates efficiently within a temperature range of -65°C to 150°C. Minimum DC current gain (hFE) is rated at 50, ensuring good amplification characteristics.

Meets Automotive Standard AEC-Q101 for quality and reliability in automotive applications. Compact dimensions of 4.6 mm length, 2.5 mm width, and 1.5 mm height. Single transistor configuration with PNP polarity for versatile circuit design.

Explore more semiconductor and discrete transistor products in the Electronics & Electricals category at EnvMart, your reliable source for industrial-grade components.

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Nexperia Transistor PNP 600 mA, 60 V, 3-Pin SOT-89 PXT2907A,115
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Frequently Asked Questions

The maximum collector current for this model is rated at 600 mA.

It operates efficiently within a temperature range of -65°C to 150°C.

This transistor is housed in a 3-pin SOT-89 package designed for surface mount applications.

The maximum power dissipation for the PXT2907A,115 is 1.1 W.

The minimum DC current gain (hFE) is rated at 50, ensuring good amplification characteristics.

It has compact dimensions of 4.6 mm in length, 2.5 mm in width, and 1.5 mm in height.

This model features a PNP polarity, suitable for various circuit designs.

The PXT2907A,115 meets the Automotive Standard AEC-Q101 for quality and reliability in automotive applications.

The maximum collector-emitter voltage (Vceo) is rated at 60 V.

The maximum emitter-base voltage (VEBO) is rated at 5 V.

This transistor is typically used in industrial electronics, automotive systems, power management, and testing setups.

The maximum collector-base voltage (VCBO) is rated at 60 V.

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