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Nexperia PNP Bipolar Transistor -100 mA, -45 V, 3-Pin DFN1412D-3 Package BC857AQC-QZ

Category Bipolar Transistors Brand Nexperia Condition New

Specifications

Country of Origin India
Brand Nexperia
Model BC857AQC-QZ
Mount Type Surface
Series BC857xQC-Q
Maximum Operating Temperature 150°C
Package Type DFN1412D-3
Minimum Operating Temperature -55°C
Standards/Approvals RoHS
Pin Count 3
Maximum Collector Emitter Voltage Vceo -45V
Minimum DC Current Gain hFE 125
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO -6V
Maximum Collector Base Voltage VCBO -50V
Automotive Standard AEC-Q101
Maximum DC Collector Current Idc -100mA
Transistor Configuration PNP

Key Features

  • Maximum collector current of 100 milliamps supports moderate load applications.
  • Collector-emitter voltage rating of 45 volts ensures operation under common voltage levels.
  • Low profile DFN1412D-3 leadless package optimizes PCB space and inspection.
  • Automotive qualified per AEC-Q101 standard for automotive electronics reliability.
  • Operating temperature range from -55°C to 150°C allows use in harsh environments.
  • High minimum current gain (hFE) of 125 ensures good amplification performance.
  • Suitable for general purpose switching and amplification in electronics and automotive circuits.
  • RoHS compliant and lead-free to meet environmental standards.

Product Description

The Nexperia BC857AQC-QZ is a PNP bipolar transistor designed for general purpose switching and amplification. It is housed in an ultra-small 3-pin DFN1412D-3 plastic leadless surface mounted device (SMD) package with side-wettable flanks, enabling a smaller PCB footprint compared to traditional leaded devices.

This transistor supports a maximum DC collector current of 100 mA and a collector-emitter voltage rating of 45 V, making it suitable for a wide range of low-power applications. The device has a high minimum DC current gain (hFE) of 125, ensuring efficient amplification of signals.

It operates reliably across a broad temperature range from -55°C to 150°C, meeting automotive-grade standards with qualification according to AEC-Q101. Its low package height of 0.5 mm facilitates use in space-restricted applications.

The transistor is compliant with RoHS regulations, emphasizing its environmentally friendly construction. Side-wettable flanks enable suitability for automated optical inspection (AOI) of solder joints, enhancing manufacturing quality control.

Maximum DC collector current: 100 mA. Maximum collector-emitter voltage: 45 V. Package: DFN1412D-3 (SOT8009) leadless SMD. Minimum DC current gain (hFE): 125. Operating temperature range: -55°C to 150°C. Automotive standard: AEC-Q101 qualified.

RoHS compliant and lead-free. Side-wettable flanks for AOI compatibility. This transistor is ideal for industrial, automotive, electronic, and manufacturing applications requiring compact, reliable switching and signal amplification components.

Explore more Nexperia semiconductors and Bipolar Transistors at EnvMart for your electronic component needs.

Nexperia PNP Bipolar Transistor -100 mA, -45 V, 3-Pin DFN1412D-3 Package BC857AQC-QZ
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Frequently Asked Questions

The maximum DC collector current for the BC857AQC-QZ is 100 mA.

This model has a collector-emitter voltage rating of 45 V.

It operates reliably within a temperature range from -55°C to 150°C.

The minimum DC current gain (hFE) for this transistor is 125.

It is housed in a DFN1412D-3 leadless SMD package.

Yes, it is RoHS compliant and lead-free, meeting environmental standards.

The BC857AQC-QZ is qualified according to the AEC-Q101 automotive standard.

This model has a pin count of 3.

The maximum emitter-base voltage (VEBO) is -6 V.

It is suitable for general purpose switching and amplification in electronics and automotive circuits.

The DFN1412D-3 package features a low profile height of 0.5 mm, optimizing PCB space.

The maximum collector-base voltage (VCBO) is -50 V.

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