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ROHM Silicon Junction Switching Diode, Isolated, 300 mA, 6-Pin SOT-457, 80 V IMN10T108

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ROHM Silicon Junction Switching Diode, Isolated, 300 mA, 6-Pin SOT-457, 80 V IMN10T108

Name: ROHM Silicon Junction Switching Diode, Isolated, 300 mA, 6-Pin SOT-457, 80 V IMN10T108
Brand: ROHM
SKU: 307409
Price: 20.22 USD
Availability: InStock

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Category Switching Diodes Brand ROHM Condition New

Specifications

Country of Origin	India
Brand	ROHM
Height	1.1mm
Length	2.9mm
Model	IMN10T108
Width	1.6mm
Mount Type	Surface
Maximum Operating Temperature	150°C
Package Type	SOT-457
Sub Type	Silicon Junction
Minimum Operating Temperature	-55°C
Pin Count	6
Maximum Power Dissipation Pd	300mW
Diode Configuration	Isolated
Peak Non-Repetitive Forward Surge Current Ifsm	4A
Maximum Forward Voltage Vf	1.2V
Peak Reverse Recovery Time trr	4ns
Maximum Forward Current If	300mA
Maximum Peak Reverse Repetitive Voltage Vrrm	80V

Key Features

Isolated diode configuration ensures reliable electrical isolation.
Maximum forward current rating of 300 mA for efficient current handling.
Six-pin surface mount design compatible with SOT-457 package type.
Peak reverse voltage of 80 V allows for robust voltage blocking.
Low peak reverse recovery time of 4 ns enhances switching performance.
Maximum forward voltage of 1.2 V minimizes power loss during conduction.
Power dissipation rating of 300 mW supports moderate power applications.
Operating temperature range from -55°C to 150°C ensures durability in harsh environments.

Product Description

ROHM IMN10T108 Silicon Junction Switching Diode is a high-reliability component featuring an epitaxial planar structure specifically engineered for high speed switching applications. It utilizes an isolated diode configuration to ensure efficient electrical isolation between pins. The device comes in a compact, surface mount friendly SOT-457 6-pin package, making it ideal for modern electronic circuit designs.

Designed to handle a maximum forward current of 300 mA and peak non-repetitive forward surge current of 4 A, this diode can sustain demanding load conditions while maintaining low conduction losses with a maximum forward voltage of 1.2 V. Its peak reverse repetitive voltage rating of 80 V offers strong voltage blocking capability. Additionally, a very fast peak reverse recovery time of 4 ns supports high-frequency switching efficiency.

The diode’s operating temperature range from -55°C to 150°C and maximum power dissipation of 300 mW provide excellent reliability in diverse industrial, electronic, and power management applications. The compact footprint measuring 2.9 mm length by 1.6 mm width and 1.1 mm height facilitates space-saving PCB layouts.

Typical use cases for the IMN10T108 diode include industrial automation, power supply switching, communication equipment, and other electronics systems that demand fast and reliable Switching Diodes. The device is RoHS compliant and meets industry standards for quality and safety.

Isolated diode configuration ensuring effective electrical isolation. Supports maximum forward current of 300 mA and surge current up to 4 A. SOT-457 package with six pins for surface mount applications. Very fast reverse recovery time of 4 ns for high-speed switching.

Wide operating temperature range from -55°C to 150°C for industrial reliability. Compact dimensions make it suitable for dense circuit layouts. Maximum forward voltage drop of 1.2 V reduces power dissipation during conduction.

Max power dissipation rating of 300 mW for moderate power usage. Explore the comprehensive range of semiconductor components on EnvMart for all your industrial and electronic design needs.