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ROHM PNP Power Transistor , -5 A Maximum DC Collector Current, -30 V Collector Emitter Voltage, 4-Pin SOT-89 2SAR542PT100

Category Bipolar Transistors Brand ROHM Condition New

Specifications

Country of Origin India
Brand ROHM
Height 1.5mm
Length 4.7mm
Model 2SAR542PT100
Width 2.7mm
Mount Type Surface
Series 2SAR542P
Maximum Operating Temperature 150°C
Package Type SOT-89
Pin Count 4
Maximum Collector Emitter Voltage Vceo -30V
Minimum DC Current Gain hFE 200
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO -6V
Maximum Collector Base Voltage VCBO -30V
Maximum Power Dissipation Pd 2W
Maximum DC Collector Current Idc -5A
Transistor Configuration Single
Maximum Transition Frequency ft 240MHz

Key Features

  • Operates with a maximum power dissipation of 2 W.
  • Designed for surface mount applications with single transistor configuration.
  • Minimum DC current gain (hFE) of 200 ensures efficient amplification.
  • High transition frequency of 240 MHz suitable for high-speed switching.
  • Maximum operating temperature up to 150°C for reliable performance.
  • Maximum collector base voltage and collector emitter voltage both rated at -30 V.
  • Pin count of 4, allowing secure mounting and connection.
  • Suitable for power amplification and switching in electronic devices and industrial applications.

Product Description

ROHM 2SAR542PT100 is a high-performance PNP power transistor designed for reliable operation in various electronic circuits requiring efficient current switching and amplification capabilities. It supports a maximum DC collector current of -5 A and can withstand collector-emitter voltages up to -30 V while dissipating up to 2 W power.

This transistor comes in a 4-pin SOT-89 surface mount package, making it ideal for compact PCB designs and automated assembly processes. The device offers a minimum DC current gain (hFE) of 200, making it suitable for switching and amplification tasks in low to medium power applications.

Featuring a maximum transition frequency of 240 MHz, the 2SAR542PT100 can operate efficiently at high frequencies. Its maximum operating temperature rating of 150°C ensures thermal stability in demanding environments.

The physical dimensions are 4.7 mm in length, 2.7 mm in width, and 1.5 mm in height, enabling space-saving design integration. With a transistor polarity of PNP and single configuration, it fits well within power transistor applications.

Operates with a maximum power dissipation of 2 W. Designed for surface mount use with a 4-pin SOT-89 package. High current handling capacity of -5 A collector current. Robust voltage ratings including -30 V collector-emitter voltage.

Minimum gain of 200 ensures sufficient amplification. High-frequency performance up to 240 MHz suitable for switching. Compact size suitable for modern electronic equipment. Operates reliably up to 150°C maximum temperature.

Single transistor configuration for versatile applications.

This transistor is ideal for telecommunications, industrial control systems, power regulation modules, and various other analog and digital electronics that require stable PNP power transistors. It aligns with industry standards for Bipolar Transistors and is an essential component for power and signal management.

Explore more power transistors and related semiconductor devices in our catalog for comprehensive electronic component solutions.

ROHM PNP Power Transistor , -5 A Maximum DC Collector Current, -30 V Collector Emitter Voltage, 4-Pin SOT-89 2SAR542PT100
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Frequently Asked Questions

The maximum DC collector current for the 2SAR542PT100 is -5 A.

This model has a maximum collector-emitter voltage rating of -30 V.

It can dissipate up to 2 W of power.

The minimum DC current gain (hFE) is 200, ensuring efficient amplification.

The maximum transition frequency is 240 MHz, suitable for high-speed switching applications.

The dimensions are 4.7 mm in length, 2.7 mm in width, and 1.5 mm in height.

It comes in a 4-pin SOT-89 surface mount package.

The maximum operating temperature is rated at 150°C.

This model is designed with a single transistor configuration.

It is suitable for power amplification and switching in electronic devices and industrial applications.

The maximum emitter-base voltage (VEBO) is -6 V.

The country of origin for the 2SAR542PT100 is India.

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