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Nexperia N-Channel MOSFET, 10.3 A Continuous Drain Current, 30 V Drain-Source Voltage, 4-Pin Surface Mount PSMN3R5-80YSFX
Specifications
| Country of Origin | India |
|---|---|
| Brand | Nexperia |
| Model | PSMN3R5-80YSFX |
| Mount Type | Surface |
| Maximum Operating Temperature | 175°C |
| Package Type | LFPAK56E |
| Minimum Operating Temperature | -55°C |
| Interfaces | USB-PD adapters |
| Pin Count | 4 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 10.3A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 13.6mΩ |
| Maximum Power Dissipation Pd | 81W |
| Maximum Gate Source Voltage Vgs | 20V |
Key Features
- Maximum continuous drain current of 10.3 amperes for reliable high current handling.
- Maximum drain-source voltage of 30 volts suitable for low voltage power applications.
- Surface mount LFPAK56E package with 4 pins for compact PCB integration.
- Low gate charge and resistance ensure high efficiency and fast switching.
- Capable of operating at temperatures ranging from -55°C to 175°C for industrial and consumer environments.
- Avalanche rated with strong energy rating for robust switching performance.
- Suitable for synchronous rectifier circuits and DC-DC converter topologies.
- Package supports surface mount assembly improving manufacturing efficiency.
Product Description
Nexperia PSMN3R5-80YSFX is an N-Channel MOSFET designed to deliver a maximum continuous drain current of 10.3 A and a maximum drain-source voltage of 30 V. Housed in a 4-pin LFPAK56E surface mount package, this MOSFET is optimized for compact and high-efficiency power switching applications in both industrial and consumer electronics.
The device offers a low gate charge and a low maximum drain-source resistance (Rds(on) = 13.6 mΩ), enabling efficient switching with minimal losses. It supports operation over a wide temperature range from -55°C up to 175°C, ensuring reliable performance in harsh environments.
This MOSFET is avalanche rated with a strong avalanche energy rating (Eas) and 100% tested for robustness. It is well suited for synchronous rectification in AC-DC and DC-DC converters, full-bridge and half-bridge circuits, as well as applications such as BLDC motor control and USB-PD power adapters.
The LFPAK56E package facilitates surface mount assembly, improving manufacturing productivity with its compact footprint and thermal performance. Despite lacking specific automotive standards approval, it is recommended for a wide range of industrial and consumer electronics power management uses.
Maximum continuous drain current of 10.3 A for high current capability. Maximum drain-source voltage of 30 V suitable for low voltage power circuits. Low Rds(on) resistance of 13.6 milliohms enhances efficiency. Wide operating temperature range from -55°C to 175°C for reliable use.
Surface mount LFPAK56E package with 4 pins for compact PCB design. Avalanche rated with strong energy rating for durability. Suitable for synchronous rectification and DC-DC converters. Ideal for BLDC motor control and USB-PD power adapter applications.
100% tested to ensure consistent quality and reliability. Explore more Nexperia semiconductor components in the discrete Semiconductors category at EnvMart to meet your power management and switching requirements.
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Frequently Asked Questions
The maximum continuous drain current for this model is 10.3 A, allowing for reliable high current handling in various applications.
It can handle a maximum drain-source voltage of 30 V, making it suitable for low voltage power applications.
This model is housed in a 4-pin LFPAK56E surface mount package, which is designed for compact PCB integration.
It operates effectively over a wide temperature range from -55°C to 175°C, suitable for both industrial and consumer environments.
The maximum gate-source voltage is 20 V, which is important for ensuring proper operation in various circuits.
The maximum drain-source resistance (Rds(on)) is 13.6 mΩ, which enhances efficiency during operation.
It is suitable for synchronous rectification, DC-DC converters, full-bridge and half-bridge circuits, as well as BLDC motor control and USB-PD power adapters.
Yes, it is avalanche rated with a strong avalanche energy rating (Eas), ensuring robust switching performance.
The dimensions are not specified in the provided data, but it is designed for surface mount applications with a compact footprint.
The maximum power dissipation for this model is 81 W, allowing it to handle significant power loads during operation.
This model features an N-channel type, which is commonly used for various switching applications.
The country of origin for this MOSFET is India, indicating its manufacturing location.
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