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Nexperia Resistor-Equipped Transistor PNP 3-Pin DFN1110D-3, Maximum DC Collector Current 100 mA, Maximum PDTA143ZQB-QZ

Category Bipolar Transistors Brand Nexperia Condition New

Specifications

Country of Origin India
Brand Nexperia
Model PDTA143ZQB-QZ
Mount Type Surface
Series PDTA143Z
Maximum Operating Temperature 150°C
Package Type DFN1110D-3
Minimum Operating Temperature -55°C
Standards/Approvals RoHS
Pin Count 3
Maximum Collector Emitter Voltage Vceo -50V
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO -10V
Automotive Standard AEC-Q101
Maximum DC Collector Current Idc -100mA
Transistor Configuration PNP

Key Features

  • This transistor features built-in resistors for simplified circuit design.
  • It supports a maximum DC collector current of 100 mA.
  • The maximum collector-emitter voltage rating is 50 V.
  • Packaged in a compact DFN1110D-3 surface mount device.
  • Suitable for automatic optical inspection due to side-wettable flanks and low package height of 0.5 mm.
  • Operates within a temperature range of -55°C to 150°C.
  • Meets RoHS compliance and AEC-Q101 automotive standard.
  • Ideal for controlling IC inputs and switching loads in digital applications.

Product Description

Nexperia PDTA143ZQB-QZ resistor-equipped transistor is a surface mount PNP transistor designed for robust digital switching and controlling IC inputs. It comes in an ultra-small 3-pin DFN1110D-3 package featuring built-in resistors, which simplifies circuit design by reducing component count and pick-and-place costs. The low height of 0.5 mm and side-wettable flanks make it suitable for automated optical inspection (AOI).

This device supports a maximum DC collector current of 100 mA and has a maximum collector-emitter voltage of 50 V, making it suitable for medium-power applications requiring efficient switching capacity. The transistor operation range spans from -55°C minimum to 150°C maximum, ensuring reliability under harsh environmental conditions.

Compliant with RoHS standards and the AEC-Q101 automotive qualification, the transistor meets industry demands for quality and safety in automotive and industrial applications. It is an excellent cost-saving alternative to the BC857 series in digital application circuits.

Built-in resistors simplify the circuit design and reduce component count. Maximum DC collector current of 100 mA supports moderate load switching. Maximum collector-emitter voltage rating of 50 V ensures adequate voltage handling.

Compact DFN1110D-3 package with side-wettable flanks for AOI compatibility. Wide operating temperature range from -55°C to 150°C for reliable performance. RoHS compliant and conforms to automotive AEC-Q101 standard. Ideal for controlling IC inputs, switching loads, and digital circuits.

Low package height of 0.5 mm enables compact PCB designs. Cost-saving alternative to the BC857 transistor series.

This transistor is suitable for industrial, automotive, electronic manufacturing, digital signal processing, and other semiconductor applications. It helps reduce component count and cost while maintaining reliable switching function.

For more industrial and discrete semiconductor components, explore our comprehensive range on EnvMart's platform.

Explore more products in our Bipolar Transistors category.

Nexperia Resistor-Equipped Transistor PNP 3-Pin DFN1110D-3, Maximum DC Collector Current 100 mA, Maximum PDTA143ZQB-QZ
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Frequently Asked Questions

The maximum DC collector current for this transistor is 100 mA.

The maximum collector-emitter voltage rating is 50 V.

This model operates within a temperature range of -55°C to 150°C.

It is packaged in a compact DFN1110D-3 surface mount device.

Yes, it meets RoHS compliance and the AEC-Q101 automotive standard.

This transistor has a pin count of 3.

The transistor polarity is PNP.

This transistor features built-in resistors that simplify circuit design and reduce component count.

It is suitable for controlling IC inputs and switching loads in digital applications.

The maximum emitter-base voltage rating is -10 V.

The height of the DFN1110D-3 package is 0.5 mm.

The country of origin for this transistor is India.

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