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Nexperia Resistor-Equipped PNP Transistor, -100 mA, -50 V, 3-Pin DFN1110D-3 PDTA114YQB-QZ
Specifications
| Country of Origin | India |
|---|---|
| Brand | Nexperia |
| Model | PDTA114YQB-QZ |
| Mount Type | Surface |
| Series | PDTA114Y |
| Maximum Operating Temperature | 150°C |
| Package Type | DFN1110D-3 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | -50V |
| Transistor Polarity | PNP |
| Maximum Emitter Base Voltage VEBO | -10V |
| Automotive Standard | AEC-Q101 |
| Maximum DC Collector Current Idc | -100mA |
| Transistor Configuration | PNP |
Key Features
- Supports a maximum DC collector current of -100 mA.
- Maximum collector emitter voltage rating of -50 V ensures high reliability.
- Features an ultra-small 3-pin DFN1110D-3 surface mount package with plastic body.
- Includes built-in resistors to simplify circuit design and reduce component count.
- Maintains operation in temperatures ranging from -55°C to 150°C.
- Complies with RoHS and automotive standard AEC-Q101.
- Low package height of 0.5 mm suitable for automatic optical inspection of solder joints.
- Offers a cost-effective alternative to the BC857 series for controlling IC inputs and switching loads.
Product Description
Nexperia PDTA114YQB-QZ resistor-equipped PNP transistor is engineered for reliable performance in electronic circuits requiring moderate current handling and switching capabilities. Housed in a compact 3-pin DFN1110D-3 surface mount package with a low height of 0.5 mm, it ensures efficient PCB space usage and excellent solder joint inspection compatibility through automatic optical inspection.
This transistor supports a maximum DC collector current of -100 mA and a maximum collector emitter voltage of -50 V, making it suitable for robust digital switching and controlling IC inputs. The built-in resistors simplify circuit design by reducing the number of external components, lowering both component count and pick-and-place costs.
Operating temperature spans from -55°C minimum to 150°C maximum, catering to automotive and industrial environments. Compliance with RoHS and the automotive AEC-Q101 standard underlines its quality and suitability for automotive electronics.
The PDTA114YQB-QZ transistor is an economical and reliable alternative to the BC857 series, offering excellent performance in switching loads and signal amplification with a PNP transistor configuration and polarity.
Maximum DC collector current: -100 mA. Maximum collector emitter voltage: -50 V. Package: DFN1110D-3 leadless SMD with side-wettable flanks. Surface mount type optimizing PCB layout efficiency. Built-in resistors reduce design complexity.
Wide operating temperature range from -55°C to 150°C. RoHS compliant and AEC-Q101 automotive standard certified. Low profile package height of 0.5 mm suitable for AOI processes. Excellent choice for digital applications, automotive controls, and general electronics.
This component is ideal for use in electronic manufacturing, automotive modules, industrial control systems, and digital switching assemblies. It supports efficiency, cost savings, and reliability improvements in electronic product designs. Discover more products in the Bipolar Transistors category on EnvMart to fulfill diverse industrial and laboratory semiconductor needs.
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Frequently Asked Questions
The maximum DC collector current for this model is -100 mA.
This transistor has a maximum collector emitter voltage rating of -50 V.
It operates within a temperature range of -55°C to 150°C.
The PDTA114YQB-QZ is housed in a 3-pin DFN1110D-3 surface mount package.
Yes, it complies with RoHS and the automotive standard AEC-Q101.
This transistor features a pin count of 3.
The built-in resistors simplify circuit design by reducing the number of external components needed.
This model has a PNP transistor configuration.
The maximum emitter base voltage (VEBO) is -10 V.
It is suitable for digital applications, automotive controls, and general electronics.
The height of the DFN1110D-3 package is 0.5 mm.
The country of origin for this transistor is India.
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