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Nexperia Transistor PNP -100 mA -45 V 3-Pin DFN1412D-3 BC857CQC-QZ

Category Bipolar Transistors Brand Nexperia Condition New

Specifications

Country of Origin India
Brand Nexperia
Model BC857CQC-QZ
Mount Type Surface
Series BC857xQC-Q
Maximum Operating Temperature 150°C
Package Type DFN1412D-3
Minimum Operating Temperature -55°C
Standards/Approvals RoHS
Pin Count 3
Maximum Collector Emitter Voltage Vceo -45V
Minimum DC Current Gain hFE 420
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO -6V
Maximum Collector Base Voltage VCBO -50V
Automotive Standard AEC-Q101
Maximum DC Collector Current Idc -100mA
Transistor Configuration PNP

Key Features

  • Ultra-small DFN1412D-3 package with side-wettable flanks for excellent soldering quality.
  • High power dissipation capability suitable for robust electronic circuits.
  • Automotive grade qualified according to AEC-Q101 standards.
  • Operating temperature range from -55°C to 150°C ensures reliability under harsh conditions.
  • Designed for automatic optical inspection (AOI) compatibility during manufacturing.
  • Low package height of only 0.5 mm, ideal for space-constrained applications.
  • General-purpose use for switching and amplification in electronic and automotive circuits.
  • RoHS compliant ensuring environmental and safety standards.

Product Description

Nexperia BC857CQC-QZ is a PNP bipolar transistor designed for high reliability and performance in a tiny DFN1412D-3 (SOT8009) surface mount device package. Rated for a maximum collector current of 100 mA and collector emitter voltage of 45 V, this transistor is suitable for use in automotive and general electronic applications. It complies with the automotive standard AEC-Q101 and the RoHS directive.

The ultra-small, leadless plastic package features side-wettable flanks, enabling superior solderability and compatibility with automatic optical inspection processes, facilitating enhanced manufacturing yield and quality control. With an operating temperature range from -55°C up to 150°C and a maximum power dissipation capability, it performs reliably in harsh industrial and automotive environments.

The transistor exhibits a high minimum DC current gain of 420, with maximum collector-base voltage of 50 V and emitter-base voltage of 6 V, supporting efficient switching and amplification functions. The low profile of 0.5 mm thickness makes it ideal for usage in space-restricted circuit designs and compact electronic devices.

Typical applications include signal amplification, switching, and general-purpose uses in automotive electronics, communications equipment, industrial controls, and consumer electronic products.

Key features of this transistor include its automotive qualification, suitability for automated manufacturing, and compact footprint, making it well-suited for use in modern, miniaturized electronics where reliability and space savings are critical.

Ultra-small DFN1412D-3 package with side-wettable flanks for excellent soldering quality. High power dissipation capability suitable for robust electronic circuits. Automotive grade qualified according to AEC-Q101 standards.

Operating temperature range from -55°C to 150°C ensures reliability under harsh conditions. Designed for automatic optical inspection (AOI) compatibility during manufacturing. Low package height of only 0.5 mm, ideal for space-constrained applications.

General-purpose use for switching and amplification in electronic and automotive circuits. RoHS compliant ensuring environmental and safety standards. Explore more high-quality Bipolar Transistors and electronic components from Nexperia and other brands at EnvMart.

Nexperia Transistor PNP -100 mA -45 V 3-Pin DFN1412D-3 BC857CQC-QZ
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Frequently Asked Questions

The maximum collector current for the BC857CQC-QZ is -100 mA.

It operates within a temperature range of -55°C to 150°C.

This transistor is housed in a DFN1412D-3 package, which is an ultra-small surface mount device.

The BC857CQC-QZ is qualified according to the AEC-Q101 automotive standard.

The minimum DC current gain (hFE) for this model is 420.

The maximum collector-emitter voltage (Vceo) for this transistor is -45 V.

The DFN1412D-3 package has a low profile height of only 0.5 mm, making it suitable for space-constrained applications.

Yes, the BC857CQC-QZ is RoHS compliant, ensuring it meets environmental and safety standards.

The maximum emitter-base voltage (VEBO) is -6 V.

Yes, it is designed for compatibility with automatic optical inspection (AOI) during manufacturing.

This transistor is suitable for general-purpose use in switching and amplification in electronic and automotive circuits.

The maximum collector-base voltage (VCBO) is -50 V.

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