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Nexperia PNP General Purpose Transistor DFN1412D-3, -100 mA Collector Current, -45 V Collector Emitter Voltage BC857CQC-QZ
Specifications
| Country of Origin | India |
|---|---|
| Brand | Nexperia |
| Model | BC857CQC-QZ |
| Mount Type | Surface |
| Series | BC857xQC-Q |
| Maximum Operating Temperature | 150°C |
| Package Type | DFN1412D-3 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | -45V |
| Minimum DC Current Gain hFE | 420 |
| Transistor Polarity | PNP |
| Maximum Emitter Base Voltage VEBO | -6V |
| Maximum Collector Base Voltage VCBO | -50V |
| Automotive Standard | AEC-Q101 |
| Maximum DC Collector Current Idc | -100mA |
| Transistor Configuration | PNP |
Key Features
- Ultra small DFN1412D-3 surface mount package with low profile of 0.5 mm height.
- High power dissipation capability suitable for space constrained designs.
- Qualified according to automotive standard AEC-Q101 ensuring reliability.
- Suitable for automatic optical inspection with side-wettable flanks.
- Wide operating temperature range from -55°C to 150°C.
- General-purpose semiconductor transistor with PNP configuration.
- Maximum collector base voltage rating of -50 V and emitter base voltage of -6 V.
- Minimum DC current gain (hFE) of 420 for efficient amplification.
Product Description
The Nexperia BC857CQC-QZ is a PNP general-purpose transistor housed in an ultra-small DFN1412D-3 (SOT8009) leadless surface-mounted device package with a low height of 0.5 mm, making it ideal for designs where space is limited.
This transistor supports a maximum DC collector current of -100 mA and withstands a collector emitter voltage of -45 V, providing robust performance for switching and amplification tasks.
Qualification to the automotive standard AEC-Q101 attests to its reliability and ruggedness in demanding automotive and industrial environments. The device’s side-wettable flanks enhance suitability for automatic optical inspection processes during manufacturing.
Operating within a wide temperature range from -55°C to 150°C, this transistor is engineered to endure harsh conditions. Its minimum DC current gain (hFE) of 420 ensures effective signal amplification.
The package’s small footprint and low height help optimize PCB real estate, especially in high-density applications.
Typical applications include general-purpose switching and amplification where size constraints and reliability are critical. The device is fully RoHS compliant, making it suitable for environmentally conscious designs.
Ultra small DFN1412D-3 surface-mounted leadless package. Maximum DC collector current of -100 mA. Maximum collector emitter voltage of -45 V. Qualified to automotive AEC-Q101 standard. Wide operating temperature range from -55°C to 150°C.
High minimum DC current gain of 420. Suitable for automatic optical inspection (AOI). RoHS compliant and environmentally friendly. Explore our comprehensive range of Bipolar Transistors at EnvMart to find components tailored for industrial, automotive, and electronic manufacturing applications.
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Frequently Asked Questions
The maximum DC collector current for this model is -100 mA.
It has a maximum collector emitter voltage rating of -45 V.
This transistor operates within a wide temperature range from -55°C to 150°C.
The minimum DC current gain (hFE) is 420, which ensures efficient amplification.
It is housed in an ultra-small DFN1412D-3 surface mount package with a low height of 0.5 mm.
Yes, it is fully RoHS compliant, making it suitable for environmentally conscious designs.
This transistor is qualified according to the automotive standard AEC-Q101, ensuring reliability in demanding environments.
The maximum emitter base voltage (VEBO) is -6 V.
This model has a pin count of 3 and features a PNP transistor configuration.
Yes, it is suitable for automatic optical inspection due to its side-wettable flanks.
The low profile of 0.5 mm helps optimize PCB real estate, especially in high-density applications.
It belongs to the BC857xQC-Q series of bipolar transistors.
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