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Nexperia PNP Transistor, -100 mA, -45 V, 3-Pin DFN1412D-3 Package BC857AQC-QZ

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Nexperia PNP Transistor, -100 mA, -45 V, 3-Pin DFN1412D-3 Package BC857AQC-QZ

Name: Nexperia PNP Transistor, -100 mA, -45 V, 3-Pin DFN1412D-3 Package BC857AQC-QZ
Brand: Nexperia
SKU: 299661
Price: 0.06 USD
Availability: InStock

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Category Bipolar Transistors Brand Nexperia Condition New

Specifications

Country of Origin	India
Brand	Nexperia
Model	BC857AQC-QZ
Mount Type	Surface
Series	BC857xQC-Q
Maximum Operating Temperature	150°C
Package Type	DFN1412D-3
Minimum Operating Temperature	-55°C
Standards/Approvals	RoHS
Pin Count	3
Maximum Collector Emitter Voltage Vceo	-45V
Minimum DC Current Gain hFE	125
Transistor Polarity	PNP
Maximum Emitter Base Voltage VEBO	-6V
Maximum Collector Base Voltage VCBO	-50V
Automotive Standard	AEC-Q101
Maximum DC Collector Current Idc	-100mA
Transistor Configuration	PNP

Key Features

Small footprint DFN1412D-3 surface mount package with side-wettable flanks.
Maximum DC collector current of -100 mA suitable for low power applications.
Collector emitter voltage rated at -45 V ensuring reliable operation.
Transistor is PNP type with leakage minimized by -50 V collector base voltage rating.
Operates in temperature range from -55°C to 150°C for extended industrial use.
Current gain (hFE) of 125 for general-purpose switching and amplification.
Compliant with RoHS and qualified to AEC-Q101 automotive standard.
Low package height of 0.5 mm enabling space-restricted circuit designs.

Product Description

The Nexperia BC857AQC-QZ transistor is a PNP bipolar junction transistor designed for general-purpose switching and amplification applications. It comes in a compact 3-pin DFN1412D-3 surface mount package with side-wettable flanks, offering a low height of 0.5 mm and a smaller footprint compared to conventional leaded SMD packages. This packaging allows space-saving designs in dense circuit boards.

This transistor supports a maximum DC collector current of -100 mA and a maximum collector emitter voltage of -45 V. Additionally, it features a maximum collector base voltage of -50 V and a maximum emitter base voltage of -6 V, ensuring robust electrical performance. The device operates across a wide temperature range from -55°C up to 150°C, making it suitable for industrial and automotive environments.

The transistor has a DC current gain (hFE) of 125, which provides adequate amplification for a broad range of switching and low power amplification tasks. Certified RoHS compliant and qualified to the AEC-Q101 automotive standard, it is recommended for use in automotive and other reliability-critical applications.

The package is optimized for automated optical inspection (AOI) of solder joints during mass manufacturing, improving assembly reliability and defects detection. Its ultra-small leadless plastic surface-mount design supports modern manufacturing and assembly technologies.

Small DFN1412D-3 leadless package with side-wettable flanks for reliable soldering. General-purpose PNP transistor suitable for switching and amplification. Maximum DC collector current: -100 mA. Maximum collector emitter voltage: -45 V.

Operational temperature range: -55°C to 150°C. RoHS compliant and AEC-Q101 qualified. Highly suitable for automotive and industrial applications. Low height package (0.5 mm) suits space-constrained designs. Automated optical inspection friendly package design.

Explore more high-quality Bipolar Transistors and semiconductors on EnvMart for your industrial electronics and automotive projects.