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Nexperia PNP Transistor 100 mA -65 V 3-Pin DFN1412D-3 Surface Mount BC856BQC-QZ

Category Bipolar Transistors Brand Nexperia Condition New

Specifications

Country of Origin India
Brand Nexperia
Model BC856BQC-QZ
Mount Type Surface
Series BC856xQC-Q
Maximum Operating Temperature 150°C
Package Type DFN1412D-3
Minimum Operating Temperature -55°C
Standards/Approvals RoHS
Pin Count 3
Maximum Collector Emitter Voltage Vceo -65V
Minimum DC Current Gain hFE 220
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO -6V
Maximum Collector Base Voltage VCBO -80V
Automotive Standard AEC-Q101
Maximum DC Collector Current Idc -100mA
Transistor Configuration PNP

Key Features

  • Capable of maximum DC collector current of 100 mA.
  • Maximum collector-emitter voltage rating of -65 V.
  • Packaged in a 3-pin ultra-small DFN1412D-3 leadless surface mounted device.
  • Suitable for high power dissipation applications with low package height of 0.5 mm.
  • Qualified according to AEC-Q101 for automotive applications.
  • Supports operation from -55°C to 150°C temperature range.
  • Provides a minimum DC current gain (hFE) of 220.
  • Designed with PNP transistor configuration for switching and amplification.

Product Description

Nexperia BC856BQC-QZ is a PNP bipolar transistor housed in a compact DFN1412D-3 (SOT8009) leadless surface mount device, offering robust performance with a maximum DC collector current of 100 mA and a collector-emitter voltage of -65 V.

This transistor features a low height of 0.5 mm and side-wettable flanks designed to facilitate automatic optical inspection, thereby ensuring quality in manufacturing processes. Its packaging allows for space-restricted applications and high power dissipation capability.

Designed according to automotive standard AEC-Q101, it is ideal for use in automotive electronics, industrial, and general-purpose switching and amplification duties. It operates reliably over a wide temperature range from -55°C up to 150°C.

The transistor exhibits a minimum DC current gain (hFE) of 220 and supports a maximum collector base voltage of -80 V, with a maximum emitter base voltage of -6 V. Its surface mount package and 3-pin configuration simplify PCB integration.

Maximum DC collector current rating of 100 mA. Maximum collector-emitter voltage rating of -65 V. 3-pin DFN1412D-3 surface mount package. RoHS compliant for environmental standards. AEC-Q101 automotive qualification. Wide operating temperature range from -55°C to 150°C.

Low package height of 0.5 mm with side-wettable flanks for AOI. PNP transistor configuration suitable for switching and amplification.

This transistor is well suited for use in automotive electronics, industrial equipment, and general electronic designs requiring a small footprint and reliable PNP transistor performance.

Explore more products in the Bipolar Transistors category at EnvMart for related semiconductor and transistor solutions.

Nexperia PNP Transistor 100 mA -65 V 3-Pin DFN1412D-3 Surface Mount BC856BQC-QZ
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Frequently Asked Questions

The maximum DC collector current for this transistor is 100 mA.

The collector-emitter voltage rating is -65 V.

This model operates reliably over a temperature range from -55°C to 150°C.

The minimum DC current gain (hFE) is 220.

It is packaged in a 3-pin DFN1412D-3 surface mount device.

Yes, it is qualified according to the AEC-Q101 automotive standard.

The maximum collector base voltage is -80 V and the maximum emitter base voltage is -6 V.

The low package height of 0.5 mm allows for space-restricted applications and facilitates high power dissipation.

The country of origin for this product is India.

This model features a PNP transistor configuration suitable for switching and amplification.

This transistor is RoHS compliant, adhering to environmental standards.

The pin count of this transistor is 3.

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