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Nexperia Bipolar Transistor, NPN 4 A, 45 V, 3-Pin DPAK Surface Mount TO-252 Package MJD148-QJ

Category Bipolar Transistors Brand Nexperia Condition New

Specifications

Country of Origin India
Brand Nexperia
Model MJD148-QJ
Mount Type Surface
Series MJD148-Q
Maximum Operating Temperature 150°C
Package Type TO-252
Minimum Operating Temperature -55°C
Standards/Approvals RoHS
Pin Count 3
Maximum Collector Emitter Voltage Vceo 45V
Minimum DC Current Gain hFE 40
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 6V
Automotive Standard AEC-Q101
Maximum DC Collector Current Idc 4A
Transistor Configuration NPN

Key Features

  • High power NPN bipolar transistor designed for surface mounting in TO-252 package.
  • Maximum DC collector current rating of 4 amperes for robust power handling.
  • Collector emitter voltage rating up to 45 volts to handle moderate voltage applications.
  • Minimum DC current gain (hFE) of 40 ensures efficient amplification.
  • Built for high temperature operation between -55°C and 150°C for automotive and industrial use.
  • Certified RoHS compliant and qualified to AEC-Q101 automotive standard.
  • Low collector emitter saturation voltage minimizes power loss and heat generation.
  • Fast switching speeds make it suitable for power switching tasks.

Product Description

Nexperia MJD148-QJ is a high power NPN bipolar transistor designed for surface mounting in a TO-252 (also known as DPAK or SOT428C) plastic package. It supports a maximum DC collector current of 4 A and a maximum collector emitter voltage of 45 V, making it suitable for power amplification and switching applications.

This transistor features high thermal power dissipation capability and energy efficiency due to its low heat generation. It offers a minimum DC current gain (hFE) of 40 and a maximum emitter base voltage of 6 V.

The device operates reliably across a wide temperature range from -55°C up to 150°C, meeting the stringent requirements of automotive and industrial environments. It is RoHS compliant and qualified to the automotive standard AEC-Q101.

With its low collector emitter saturation voltage, the MJD148-QJ ensures efficient power switching with minimal losses. The fast switching speeds add to its usability in various electronic modules requiring rapid response times.

Its 3-pin TO-252 surface mount package allows for compact PCB layouts and enhances ease of assembly. The electrical characteristics align closely with the popular MJD148 series, facilitating design compatibility.

High thermal power dissipation enhances device reliability. Energy efficient operation reduces heat generation. RoHS compliant and AEC-Q101 qualified for automotive use. Fast switching suitable for power management circuits.

Compact 3-pin TO-252 surface mounted package for easy PCB integration. This transistor is widely used in automotive electronics, industrial power control, and other semiconductor applications requiring robust NPN power transistors.

Explore more Nexperia Bipolar Transistors and other discrete semiconductor components in the Electronics & Electricals category on EnvMart.

Nexperia Bipolar Transistor, NPN 4 A, 45 V, 3-Pin DPAK Surface Mount TO-252 Package MJD148-QJ
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Frequently Asked Questions

The maximum DC collector current rating of the MJD148-QJ is 4 amperes, allowing for robust power handling in various applications.

This model has a maximum collector-emitter voltage rating of 45 volts, making it suitable for moderate voltage applications.

The minimum DC current gain (hFE) for the MJD148-QJ is 40, ensuring efficient amplification in its applications.

It operates reliably across a wide temperature range from -55°C to 150°C, suitable for automotive and industrial environments.

This transistor is housed in a TO-252 package, also known as DPAK, which is designed for surface mounting.

Yes, it is RoHS compliant and qualified to the AEC-Q101 automotive standard, ensuring it meets specific environmental and automotive requirements.

The maximum emitter-base voltage (VEBO) for the MJD148-QJ is 6 volts.

Key features include high thermal power dissipation, low collector-emitter saturation voltage, and fast switching speeds, making it suitable for power management tasks.

The MJD148-QJ has a 3-pin configuration, facilitating easy integration into PCB layouts.

It is configured as an NPN transistor, commonly used in various electronic applications.

The country of origin for the MJD148-QJ is India.

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