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STMicroelectronics 4-Element TVS Diode Array 8-Pin QFN HSP061-4NY8
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 0.5mm |
| Length | 2.05mm |
| Model | HSP061-4NY8 |
| Width | 1.05mm |
| Mount Type | Surface |
| Series | HSP061 |
| Maximum Operating Temperature | 150°C |
| Package Type | QFN |
| Minimum Operating Temperature | -40°C |
| Pin Count | 8 |
| Number of Elements per Chip | 4 |
| Clamping Voltage VC | 18V |
| Diode Configuration | Complex Array |
| Minimum Breakdown Voltage Vbr | 6V |
| Maximum Reverse Stand-off Voltage Vwm | 3V |
| Test Current It | 1mA |
| Maximum Peak Pulse Current Ippm | 3A |
| Maximum Reverse Leakage Current | 100nA |
Key Features
- This TVS diode array features an 8-pin QFN package suitable for surface mounting.
- It offers a minimum breakdown voltage of 6 V and maximum reverse stand-off voltage of 3 V.
- The device supports a maximum peak pulse current of 3 A ensuring robust ESD protection.
- Operating temperature range extends from -40°C to 150°C for broad application versatility.
- The diode array uses a complex diode configuration with 4 elements per chip for enhanced protection performance.
- Clamping voltage is rated at 18 V to limit transient voltage spikes effectively.
- Small form factor with dimensions approximately 2.05 mm length, 1.05 mm width, and 0.5 mm height.
- The product does not carry automotive certification but excels in general electronic component protection.
Product Description
STMicroelectronics HSP061-4NY8 is a 4-element transient voltage suppressor (TVS) diode array designed for protecting sensitive electronic circuits and high-speed data lines.
This 8-pin QFN surface mount device operates with a minimum breakdown voltage of 6 V and features a maximum reverse stand-off voltage of 3 V, providing effective suppression of voltage transients.
With a maximum peak pulse current of 3 A and a clamping voltage of 18 V, these diodes ensure reliable electrostatic discharge (ESD) protection within harsh environments. The device tolerates a broad operating temperature range from -40°C to 150°C, making it suitable for diverse industrial and electronic applications.
The diode array comprises four elements per chip arranged in a complex configuration, optimized for high-speed ESD protection and circuit reliability enhancement. The compact package size of 2.05 mm by 1.05 mm and 0.5 mm height supports high-density PCB designs, especially in power and semiconductor circuits.
This STMicroelectronics diode array is appropriate for electronic component manufacturers, semiconductor applications, telecommunications, and industrial electronics. This TVS diode array features an 8-pin QFN package suitable for surface mounting.
It offers a minimum breakdown voltage of 6 V and maximum reverse stand-off voltage of 3 V. The device supports a maximum peak pulse current of 3 A ensuring robust ESD protection. Operating temperature range extends from -40°C to 150°C for broad application versatility.
The diode array uses a complex diode configuration with 4 elements per chip for enhanced protection performance. Clamping voltage is rated at 18 V to limit transient voltage spikes effectively. Small form factor with dimensions approximately 2.05 mm length, 1.05 mm width, and 0.5 mm height.
The product does not carry automotive certification but excels in general electronic component protection. Explore STMicroelectronics TVS Diode Arrays and other semiconductor products at EnvMart for reliable electronics design and application solutions.
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Frequently Asked Questions
The minimum breakdown voltage of this model is 6 V.
The maximum reverse stand-off voltage is 3 V.
It supports a maximum peak pulse current of 3 A.
The clamping voltage is rated at 18 V.
The operating temperature range extends from -40°C to 150°C.
The dimensions are approximately 2.05 mm in length, 1.05 mm in width, and 0.5 mm in height.
There are 4 elements per chip in this model.
It uses an 8-pin QFN package suitable for surface mounting.
The maximum reverse leakage current is specified at 100 nA.
The test current is 1 mA.
It is suitable for protecting sensitive electronic circuits and high-speed data lines in industrial and electronic applications.
The diode configuration is a complex array, optimized for high-speed ESD protection.
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