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STMicroelectronics NPN Transistor 6 A 65 V 3-Pin DPAK 2STD1665T4
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 2.4mm |
| Length | 6.6mm |
| Model | 2STD1665T4 |
| Width | 10.1mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | 0°C |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | 65V |
| Minimum DC Current Gain hFE | 30 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 7V |
| Maximum Collector Base Voltage VCBO | 150V |
| Maximum Power Dissipation Pd | 15W |
| Maximum DC Collector Current Idc | 6A |
| Transistor Configuration | Single |
Key Features
- This transistor features a maximum power dissipation of 15 W.
- It supports a maximum collector base voltage of 150 V and a maximum emitter base voltage of 7 V.
- The device operates reliably within 0 to 150°C temperature range.
- Designed for surface mount applications with a TO-252 package.
- Physical dimensions include a height of 2.4 mm, length of 6.6 mm, and width of 10.1 mm.
- Offers a minimum DC current gain (hFE) of 30 for efficient performance.
- The transistor configuration is single and is suitable for power transistor applications.
Product Description
STMicroelectronics 2STD1665T4 is a high-performance NPN bipolar power transistor designed for industrial and electronic applications requiring robust switching and amplification. With a maximum collector current of 6 A and collector-emitter voltage of 65 V, this 3-pin DPAK transistor is suitable for surface mount technology, ensuring easy integration into compact printed circuit boards.
The transistor supports a maximum power dissipation of 15 W, enabling reliable operation in demanding power scenarios. It operates safely in temperatures from 0°C up to 150°C, enhancing durability for applications in automotive, industrial control, and power regulation systems.
Featuring a minimum DC current gain of 30, the device ensures sufficient amplification, making it adept for switching and amplification tasks. Its physical dimensions (height 2.4 mm, length 6.6 mm, width 10.1 mm) and TO-252 package type allow for space-efficient design implementations.
This transistor comes with a maximum collector base voltage of 150 V and emitter base voltage of 7 V, providing stable operation within its electrical limits. The single transistor configuration and NPN polarity make it suitable for various discrete semiconductor roles within electronic power management.
This transistor offers a maximum DC collector current of 6 A. The collector-emitter voltage rating is 65 V. Maximum power dissipation is 15 W. Compact surface mount TO-252 package enables easy PCB integration. Operating temperature ranges from 0 to 150°C for diverse environments.
Physical dimensions: 2.4 mm height, 6.6 mm length, 10.1 mm width. Minimum DC current gain of 30 ensures effective switching functionality.
Ideal for use in industrial electronics, power amplifiers, automotive electronic controls, and general power transistor applications. For detailed technical support, datasheet and documentation are readily available from STMicroelectronics.
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Frequently Asked Questions
The maximum DC collector current for the 2STD1665T4 is 6 A.
This model has a maximum collector-emitter voltage rating of 65 V.
The maximum power dissipation for this transistor is 15 W.
It operates reliably within a temperature range of 0°C to 150°C.
The dimensions are 2.4 mm in height, 6.6 mm in length, and 10.1 mm in width.
The minimum DC current gain (hFE) is 30, ensuring effective performance in applications.
The maximum collector base voltage (VCBO) is 150 V.
This transistor features a single configuration and is of NPN polarity.
Yes, it is designed for surface mount applications with a TO-252 package.
The maximum emitter base voltage (VEBO) is 7 V.
It is suitable for industrial electronics, power amplifiers, automotive electronic controls, and general power transistor applications.
The country of origin for this product is India.
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