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Nexperia Small Signal NPN Transistor 100 mA, 45 V, 3-Pin SOT-23 BC847B,215

Category Bipolar Transistors Brand Nexperia Condition New

Specifications

Country of Origin China
Brand Nexperia
Height 1.1mm
Length 3mm
Model BC847B,215
Width 1.4mm
Mount Type Surface
Series BC847
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -65°C
Standards/Approvals RoHS
Pin Count 3
Maximum Collector Emitter Voltage Vceo 45V
Minimum DC Current Gain hFE 200
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 6V
Maximum Collector Base Voltage VCBO 50V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 250mW
Maximum DC Collector Current Idc 100mA
Transistor Configuration Single
Maximum Transition Frequency ft 100MHz

Key Features

  • Maximum power dissipation of 250 mW ensures reliable performance.
  • Minimum DC current gain (hFE) of 200 enhances amplification efficiency.
  • Operating temperature range from -65°C to 150°C supports harsh environments.
  • Maximum transition frequency of 100 MHz allows for high-speed switching applications.
  • Complies with RoHS standards and automotive standard AEC-Q101 certification.
  • Suitable for surface mount (SOT-23) applications requiring low power and small signal handling.
  • Ideal for electronic components, power, and connector semiconductor applications.

Product Description

Nexperia BC847B,215 is a small signal NPN transistor designed for use in electronic components and discrete semiconductor applications. It has a maximum collector current of 100 mA and can withstand a collector-emitter voltage of 45 V, packaged in a 3-pin SOT-23 surface mount configuration.

This transistor features a maximum power dissipation of 250 mW, enabling reliable operation under moderate power conditions. Its minimum DC current gain (hFE) of 200 allows for effective signal amplification in various circuit designs.

The device operates within a wide temperature range of -65°C to 150°C, making it suitable for demanding industrial and automotive environments. It also offers a maximum transition frequency (ft) of 100 MHz, which is beneficial for high-frequency switching applications.

Compact physical dimensions of 3 mm length, 1.4 mm width, and 1.1 mm height facilitate integration into limited space layouts on PCBs. The transistor meets RoHS compliance and automotive AEC-Q101 standards, ensuring environmental and reliability certifications.

Maximum power dissipation of 250 mW ensures reliable performance. Minimum DC current gain (hFE) of 200 enhances amplification efficiency. Operating temperature range from -65°C to 150°C supports harsh environments. Maximum transition frequency of 100 MHz allows for high-speed switching applications.

Compact dimensions: length 3 mm, width 1.4 mm, and height 1.1 mm for space-saving PCB layout. Complies with RoHS standards and automotive standard AEC-Q101 certification. Suitable for surface mount (SOT-23) applications requiring low power and small signal handling.

Ideal for electronic components, power, and connector semiconductor applications.

This transistor is widely utilized in industrial, automotive, electronic components manufacturing, and power connector applications requiring discrete semiconductors with reliable, small signal switching capabilities.

Explore similar Nexperia Bipolar Transistors and semiconductor products in the Electronics & Electricals category at EnvMart for comprehensive industrial solutions.

Nexperia Small Signal NPN Transistor 100 mA, 45 V, 3-Pin SOT-23 BC847B,215
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Frequently Asked Questions

The maximum collector current for this model is 100 mA.

It operates within a temperature range of -65°C to 150°C.

The maximum power dissipation is 250 mW.

This model has dimensions of 3 mm in length, 1.4 mm in width, and 1.1 mm in height.

The maximum transition frequency is 100 MHz, which allows for high-speed switching applications.

This transistor is designed for surface mount applications in a SOT-23 package.

The minimum DC current gain (hFE) is 200, enhancing amplification efficiency.

It complies with RoHS standards and the automotive standard AEC-Q101 certification.

The maximum collector-emitter voltage (Vceo) is 45 V.

This model is suitable for electronic components, power, and connector semiconductor applications requiring low power and small signal handling.

The maximum emitter-base voltage (VEBO) is 6 V.

The transistor polarity is NPN.

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