Nexperia Low Saturation Voltage PNP Bipolar Transistor 1 A DC Collector Current 60 V Collector Emitter Voltage PBSS5160U,115

Nexperia PBSS5160U,115 is a Low Saturation Voltage PNP Bipolar Junction Transistor designed for compact space-saving applications. It supports a maximum DC collector current of 1 A and a maximum collector emitter voltage of 60 V, making it suitable for power and switching circuits in electronic and automotive industries.

Its surface mount UMT package with 3 pins enables easy PCB mounting and efficient thermal management. Operating temperature ranges from -65°C to 150°C, which complies with automotive standard AEC-Q101, ensuring reliability in harsh environments.

The transistor features a minimum DC current gain (hFE) of 100 and a maximum power dissipation of 415 mW, which ensures low losses and reduces heat generation. The high transition frequency of 185 MHz allows it to operate effectively in high-speed switching applications typical in digital electronics.

The compact dimensions of 2 mm length, 1.25 mm width, and 0.95 mm height facilitate integration into densely packed circuit boards. This component is specifically designed for single transistor configuration applications with PNP polarity, suitable for a variety of industrial, automotive, and electronic projects requiring reliable bipolar transistors.

This product offers low saturation voltage, improving overall circuit efficiency and thermal performance. Ideal for switching and digital circuits demanding high frequency and power handling. Compliant with automotive AEC-Q101 standard for automotive-grade quality assurance.

Compact UMT package supports surface mount technology for modern assembly processes. Wide operating temperature range ensures effective function in diverse environments.

Choose Nexperia Bipolar Transistors for robust performance in industrial, automotive, and high-frequency electronic applications. Explore our Electronics & Electricals and Semiconductor categories on EnvMart for compatible components.