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STMicroelectronics Zener Diode 28 V Nominal Voltage 1.7 W Power Dissipation Through Hole 2-Pin DO-15 BZW06-28
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 3.53mm |
| Length | 68.75mm |
| Model | BZW06-28 |
| Mount Type | Through Hole |
| Series | BZW06 |
| Maximum Operating Temperature | 175°C |
| Package Type | DO-15 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 2 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation Pd | 1.7W |
| Diode Configuration | Single |
| Maximum Reverse Leakage Current | 200nA |
| Nominal Zener Voltage Vz | 28V |
Key Features
- Single diode configuration suitable for overvoltage protection.
- Maximum reverse leakage current of 200 nA for enhanced stability.
- Operating temperature range from -55°C to 175°C ensuring reliability in diverse environments.
- High peak pulse power capability ideal for transient voltage suppression.
- Compact dimensions with length of 68.75 mm and height of 3.53 mm.
- BZW06 series device with robust design for standard electronic applications.
Product Description
STMicroelectronics BZW06-28 Zener Diode is a discrete semiconductor designed for voltage regulation and protection in electronic circuits. Featuring a nominal Zener voltage of 28 V and maximum power dissipation of 1.7 W, this single element diode is mounted through hole in a 2-pin DO-15 package, making it compatible with various PCB designs.
It offers a low maximum reverse leakage current of 200 nA, which helps maintain circuit stability and efficiency under varying load conditions. The device operates reliably across a wide temperature range from -55°C to 175°C, supporting industrial and commercial applications exposed to harsh environments.
The BZW06-28 offers high peak pulse power handling, up to 600 W for transient pulses (10/1000 μs), making it ideal for protecting sensitive electronics such as MOSFETs and other integrated circuits against voltage spikes and overvoltage conditions. Its fast response time and low clamping factor ensure effective clamping during transient events.
Compact in size with a length of 68.75 mm and height of 3.53 mm, the diode integrates seamlessly into PCB layouts using the through hole mounting technique. The BZW06 series is well respected for consistent performance and robust manufacturing quality.
Single diode configuration suitable for overvoltage protection. Maximum reverse leakage current of 200 nA for enhanced stability. Operating temperature range from -55°C to 175°C ensuring reliability in diverse environments.
High peak pulse power capability ideal for transient voltage suppression. Compact dimensions with length of 68.75 mm and height of 3.53 mm. BZW06 series device with robust design for standard electronic applications.
This Zener diode is commonly used in electronics, semiconductor manufacturing, power regulation, and circuit protection in industrial, commercial, and laboratory environments. Its reliable characteristics support voltage sensitive device safety and circuit longevity.
Explore a full range of STMicroelectronics semiconductor components for effective design and implementation in your electronic projects and industrial solutions at EnvMart.
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Frequently Asked Questions
The nominal Zener voltage of the BZW06-28 diode is 28 V.
This Zener diode has a maximum power dissipation of 1.7 W.
The maximum reverse leakage current for this diode is 200 nA, which helps maintain circuit stability.
The operating temperature range for this model is from -55°C to 175°C.
The BZW06-28 has a length of 68.75 mm and a height of 3.53 mm.
This diode uses through hole mounting, making it compatible with various PCB designs.
The BZW06-28 has 2 pins.
It comes in a DO-15 package type.
The BZW06-28 has a high peak pulse power capability of up to 600 W for transient pulses (10/1000 μs).
This Zener diode is suitable for voltage regulation and protection in electronic circuits, including industrial and commercial applications.
The BZW06-28 belongs to the BZW06 series of diodes.
This diode configuration consists of a single element per chip.
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