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onsemi Digital Transistor PNP 80 V 50 W Surface Mount 2-Pin MJB45H11T4G
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 4.83mm |
| Length | 10.29mm |
| Model | MJB45H11T4G |
| Width | 15.88mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Pin Count | 2 |
| Maximum Collector Emitter Voltage Vceo | -80V |
| Minimum DC Current Gain hFE | 60 |
| Transistor Polarity | PNP |
| Maximum Emitter Base Voltage VEBO | 5V dc |
| Maximum Collector Base Voltage VCBO | 80V |
| Automotive Standard | AEC-Q101 |
| Maximum Power Dissipation Pd | 50W |
| Transistor Configuration | Single |
Key Features
- Maximum collector emitter voltage of -80 V for high voltage applications.
- Surface mount type with compact 2-pin configuration.
- Maximum power dissipation of 50 W ensuring reliable operation under load.
- Designed with PNP transistor polarity for complementary pair configurations.
- Minimum DC current gain (hFE) of 60 for efficient current amplification.
- Maximum operating temperature of 150°C suitable for demanding environments.
- Automotive standard compliant with AEC-Q101 certification.
Product Description
onsemi MJB45H11T4G is a high-performance digital PNP bipolar power transistor designed for general purpose power amplification and switching.
This 2-pin surface mount transistor supports a maximum collector emitter voltage of -80 V and a power dissipation capacity of 50 W, making it suitable for output and driver stages in power regulators, converters, and amplifiers.
The transistor offers a minimum DC current gain of 60 and fast switching speeds, ensuring efficient operation in various industrial and automotive applications. With a maximum operating temperature rating of 150°C and compliance with the automotive AEC-Q101 standard, this device meets stringent reliability requirements.
The compact dimensions of 15.88 mm width, 10.29 mm length, and 4.83 mm height facilitate easy integration into circuit boards using surface mount technology. Maximum collector emitter voltage of -80 V for high voltage demands.
Surface mount with 2-pin configuration for compact design. Power dissipation up to 50 W for heavy load operations. PNP transistor polarity suitable for complementary transistor pairs. Minimum dc current gain of 60 ensuring effective amplification.
High operating temperature tolerance at 150°C for reliability. Automotive standard AEC-Q101 compliance for automotive electronics. Compact physical dimensions for flexible PCB layouts.
This transistor is widely used in industrial machinery, automotive electronics, power management systems, and manufacturing equipment requiring durable and efficient switching components.
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Frequently Asked Questions
The maximum collector emitter voltage (Vceo) of the MJB45H11T4G is -80 V, making it suitable for high voltage applications.
This model can handle a maximum power dissipation of 50 W, ensuring reliable operation under load conditions.
The dimensions of this transistor are 15.88 mm in width, 10.29 mm in length, and 4.83 mm in height.
The minimum DC current gain (hFE) of the MJB45H11T4G is 60, which supports efficient current amplification.
This transistor has a maximum operating temperature rating of 150°C, suitable for demanding environments.
The MJB45H11T4G is designed for surface mount installation with a compact 2-pin configuration.
This model complies with the AEC-Q101 automotive standard, ensuring it meets reliability requirements for automotive applications.
The transistor polarity of the MJB45H11T4G is PNP, making it suitable for complementary pair configurations.
The maximum emitter base voltage (VEBO) for this transistor is 5 V DC.
This transistor is widely used in industrial machinery, automotive electronics, and power management systems that require efficient switching components.
The maximum collector base voltage (VCBO) of the MJB45H11T4G is 80 V.
The MJB45H11T4G has a pin count of 2, consistent with its surface mount design.
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