onsemi Digital Transistor N-Channel 18 A Maximum Current TO-220 Package Through Hole Mount FDP18N50

onsemi FDP18N50 Digital Transistor is a high-voltage N-Channel MOSFET housed in a TO-220 through-hole package. It features a maximum continuous collector current of 18 A and power dissipation up to 235 W, supporting rigorous industrial and commercial use cases.

This transistor employs UniFETTM technology, based on planar stripe and DMOS processes to achieve lower on-state resistance (RDS(on) = 265 mOhm max at VGS = 10 V and ID = 9 A), lower gate charge (typical 45 nC), and reduced Crss (typical 25 pF). It allows efficient, high-speed switching with high avalanche energy robustness, suitable for power converter designs including power factor correction circuits and electronic lamp ballasts.

The device is designed for through-hole mounting with a standard TO-220 plastic package and has three pins. It operates reliably at temperatures up to 150°C. TO-220 through-hole package for easy integration into printed circuit boards.

N-Channel transistor polarity suitable for a broad range of switching operations. Maximum power dissipation of 235 W supports high load conditions. Low on-resistance enhances energy efficiency in circuits. Typical low gate charge leads to faster switching speeds and less heat generation.

Ideal for industrial electronics, consumer appliances, and power management circuits. Wide application including power supplies for LCD, LED, PDP TVs and UPS systems. Manufactured in China with focus on quality and reliability.

Choose onsemi FDP18N50 for dependable high-power transistor performance in demanding electronic applications. Browse more power transistors and discrete semiconductors at EnvMart for comprehensive sourcing options.