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onsemi Digital Transistor 50 V NPN + PNP 100 mA Surface SOT-363, 6-Pin MUN5335DW1T1G

Category Digital Transistor Brand onsemi Condition New

Specifications

Country of Origin China
Brand onsemi
Model MUN5335DW1T1G
Mount Type Surface
Maximum Operating Temperature 150°C
Package Type SOT-363
Standards/Approvals RoHS, Pb-Free
Pin Count 6
Maximum Continuous Collector Current Ic 100mA
Maximum Collector Emitter Voltage Vceo 50V
Minimum DC Current Gain hFE 80
Transistor Polarity NPN + PNP
Maximum Collector Emitter Saturation Voltage VceSAT 0.25V
Maximum Collector Base Voltage VCBO 50V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 385mW
Transistor Configuration Complementary Bias Resistor Transistors

Key Features

  • Includes NPN and PNP transistor polarity in a complementary bias resistor configuration.
  • Maximum collector emitter voltage of 50 V and maximum continuous collector current of 100 mA.
  • Features integrated monolithic bias network reducing external components and board space.
  • Minimum DC current gain of 80 with maximum collector emitter saturation voltage of 0.25 V.
  • Complies with RoHS, Pb-Free standards, and automotive standard AEC-Q101.
  • Compact Surface SOT-363 6-pin package designed for surface mount applications.

Product Description

The onsemi MUN5335DW1T1G is a digital transistor designed for use in advanced electronic circuits, offering a 50 V maximum collector emitter voltage and 100 mA maximum continuous collector current. Packaged in a surface-mount SOT-363 6-pin format, it provides both NPN and PNP transistor polarities in a complementary bias resistor configuration, enabling simplified circuit design by integrating the bias resistors into the transistor device itself.

This transistor features a monolithic bias network that includes a series base resistor and a base-emitter resistor. This integration reduces the component count and board space required, making it an ideal solution for compact electronic devices. The device's robust electrical characteristics include a maximum power dissipation rating of 385 mW and an operating temperature range up to 150°C, suitable for demanding applications.

Featuring a minimum DC current gain of 80 and a maximum collector emitter saturation voltage of only 0.25 V, the MUN5335DW1T1G ensures efficient switching performance with low power loss. The transistor complies with environmental standards RoHS and Pb-Free, and is qualified to meet stringent automotive standard AEC-Q101, making it suitable for automotive and industrial electronics.

The device reduces system cost and assembly complexity by eliminating external bias resistors. Compact SOT-363 package is optimized for surface mount technology, promoting high-density PCB layouts. Suitable for applications in power supplies, signal switching, amplification, and digital logic circuits.

Operates reliably across a wide temperature range, making it adaptable for industrial and automotive environments. Contributes to enhanced device miniaturization and improved circuit reliability.

As part of onsemi’s semiconductor offerings, this digital transistor provides a high level of integration and performance for modern electronic circuit designs. Its compact footprint and reliable operation make it a versatile component for engineers in sectors such as industrial automation, automotive electronics, communication systems, and consumer electronics.

Explore more components like this in the Digital Transistor category at EnvMart to support your electronic design and manufacturing needs.

onsemi Digital Transistor 50 V NPN + PNP 100 mA Surface SOT-363, 6-Pin MUN5335DW1T1G
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Frequently Asked Questions

The maximum collector emitter voltage of this model is 50 V.

It has a maximum continuous collector current of 100 mA.

This model is packaged in a SOT-363 format, which is designed for surface mount applications.

The maximum operating temperature for this transistor is 150°C.

It features a minimum DC current gain of 80.

Yes, it complies with RoHS and Pb-Free standards, as well as the automotive standard AEC-Q101.

The maximum collector emitter saturation voltage is 0.25 V.

This model uses a complementary bias resistor configuration, integrating bias resistors into the device itself.

The specific dimensions of the SOT-363 package are not provided, but it is designed for high-density PCB layouts.

It is suitable for applications in power supplies, signal switching, amplification, and digital logic circuits.

The maximum power dissipation rating is 385 mW.

This digital transistor has a pin count of 6.

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