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STMicroelectronics Switching Diode, Common Cathode, 16 A, 3-Pin TO-220 Package, 400 V STTH16R04CT
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 15.9mm |
| Length | 10.4mm |
| Model | STTH16R04CT |
| Width | 4.6mm |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Sub Type | Silicon Junction |
| Minimum Operating Temperature | -40°C |
| Pin Count | 3 |
| Diode Configuration | Common Cathode |
| Peak Non-Repetitive Forward Surge Current Ifsm | 120A |
| Maximum Forward Voltage Vf | 1.75V |
| Peak Reverse Recovery Time trr | 25ns |
| Maximum Forward Current If | 16A |
| Maximum Peak Reverse Repetitive Voltage Vrrm | 400V |
Key Features
- The diode uses a silicon junction and supports a maximum repetitive peak reverse voltage of 400 V.
- Peak forward surge current capability is 120 A, ensuring robustness under transient conditions.
- The device operates effectively across a temperature range from -40°C to 175°C.
- Designed with a low maximum forward voltage of 1.75 V for efficient switching performance.
- The diode has a peak reverse recovery time of 25 ns to facilitate fast switching applications.
- Compact dimensions with a length of 10.4 mm, height of 15.9 mm, and width of 4.6 mm enable easy integration in various electronic circuits.
- Package type TO-220 provides sturdy mechanical and thermal performance for power applications.
Product Description
STMicroelectronics STTH16R04CT is a high-performance switching diode designed for power electronics applications requiring efficient switching and high current carrying capability.
This diode features a common cathode silicon junction with a maximum forward current rating of 16 amperes and is housed in a durable TO-220 through-hole package that simplifies assembly and provides effective heat dissipation.
With a maximum repetitive peak reverse voltage of 400 volts, this diode can endure demanding voltage conditions typical in power supply and rectification circuits. The device supports a peak non-repetitive forward surge current of 120 amperes, enabling it to withstand transient current spikes without damage.
Operating temperature spans from -40°C to 175°C, making it reliable in harsh industrial environments. The diode's peak reverse recovery time of 25 nanoseconds ensures fast switching suitable for modern electronic systems.
Compact physical dimensions of 10.4 mm length, 15.9 mm height, and 4.6 mm width allow for flexible PCB layout designs. This component is ideal for industrial, laboratory, construction, and power management applications requiring robust semiconductor switching diodes.
The diode has a common cathode diode configuration. Maximum forward current is rated at 16 A. Silicon junction construction ensures reliability. Package type is TO-220 with 3 pins for through-hole mounting. Peak reverse recovery time is 25 ns, suited for switching applications.
Maximum peak reverse repetitive voltage is 400 V. Maximum forward voltage is 1.75 V. Operates between -40°C and 175°C. Peak non-repetitive forward surge current is 120 A. Dimensions are 10.4 mm length, 15.9 mm height, and 4.6 mm width.
Explore the Electronics & Electricals category for more semiconductor and Switching Diode products compatible with your industrial and commercial applications.
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Frequently Asked Questions
The maximum forward current rating of this diode is 16 A.
The peak reverse recovery time for this model is 25 ns, making it suitable for fast switching applications.
It can handle a maximum repetitive peak reverse voltage of 400 V.
The dimensions are 10.4 mm in length, 15.9 mm in height, and 4.6 mm in width.
This diode is housed in a TO-220 package, which is designed for through-hole mounting.
The peak non-repetitive forward surge current capability is 120 A.
The operating temperature range for this model is from -40°C to 175°C.
The maximum forward voltage of this diode is 1.75 V.
It uses a common cathode diode configuration.
The TO-220 package has 3 pins for connection.
This diode features a silicon junction construction.
The diode is manufactured in India.
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