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Nexperia Silicon Junction Switching Diode 200 mA 100 V Surface Mount SC-88 6-Pin BAV99S,115

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Nexperia Silicon Junction Switching Diode 200 mA 100 V Surface Mount SC-88 6-Pin BAV99S,115

Name: Nexperia Silicon Junction Switching Diode 200 mA 100 V Surface Mount SC-88 6-Pin BAV99S,115
Brand: Nexperia
SKU: 245441
Price: 0.07 USD
Availability: InStock

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Category Switching Diode Brand Nexperia Condition New

Specifications

Country of Origin	Malaysia
Brand	Nexperia
Height	1mm
Length	2.2mm
Model	BAV99S,115
Width	1.35mm
Mount Type	Surface
Series	BAV99
Maximum Operating Temperature	150°C
Package Type	SC-88
Sub Type	Silicon Junction
Minimum Operating Temperature	-65°C
Pin Count	6
Maximum Power Dissipation Pd	250mW
Diode Configuration	Series
Peak Non-Repetitive Forward Surge Current Ifsm	4A
Maximum Forward Voltage Vf	1.25V
Peak Reverse Recovery Time trr	4ns
Maximum Forward Current If	200mA
Maximum Peak Reverse Repetitive Voltage Vrrm	100V
Reverse voltage	VR ≤ 100 V
Low capacitance	Cd ≤ 1.5 pF

Key Features

High switching speed with maximum peak reverse recovery time of 4 ns.
Encapsulated in small surface-mount SC-88 package with 6 pins.
Supports customized high density circuit designs and offers low capacitance of up to 1.5 pF.
Operates reliably within temperatures ranging from -65°C to 150°C.
Maximum power dissipation of 250 mW and a peak non-repetitive forward surge current of 4 A.
Low leakage current and maximum forward voltage of 1.25 V enhances performance.
Compact dimensions of 2.2 mm length, 1.35 mm width, and 1 mm height suit dense PCB layouts.
Manufactured in Malaysia to ensure consistent quality.

Product Description

Nexperia BAV99S,115 is a high-speed Silicon Junction Switching Diode designed for use in general-purpose and high-speed switching applications in electronic circuits. It supports a maximum forward current of 200 mA and a peak reverse voltage rating of 100 V, making it suitable for protection, switching, and signal processing tasks.

The diode features a compact SC-88 surface-mount package with 6 pins, allowing easy integration into densely packed circuits. With a very low peak reverse recovery time of 4 ns and low capacitance up to 1.5 pF, this device minimizes switching losses and enhances circuit responsiveness, especially in high-frequency environments.

The device operates over a wide temperature range from -65°C up to 150°C ensuring reliability in harsh industrial and commercial environments. The maximum power dissipation is rated at 250 mW with a peak non-repetitive forward surge current of 4 A, supporting transient conditions effectively.

Physical dimensions (LxWxH) of 2.2 mm x 1.35 mm x 1 mm allow compact circuit board design without compromising performance. Manufactured in Malaysia, this diode meets rigorous quality standards although it does not carry specific certifications or automotive standards.

High-speed switching with 4 ns peak recovery time. Surface-mount SC-88 package with 6-pin configuration. Low capacitance and leakage currents enable efficient switching. Wide operating temperature range from -65°C to 150°C.

Reliable performance with 250 mW power dissipation. Peak reverse voltage up to 100 V and forward current of 200 mA. Compact size facilitates dense PCB layouts. Manufactured in Malaysia with precise planar technology fabrication.

This switching diode is ideal for industrial electronic applications, high-speed switching circuits, signal processing, and general-purpose use in semiconductors. Its surface-mount form factor supports automated assembly lines and modern electronics manufacturing processes.

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