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ROHM Bipolar Transistor 150 mA NPN + PNP 50 V 5-Pin SOT-25 FMY1AT148

Category Bipolar Transistors Brand ROHM Condition New

Specifications

Country of Origin Thailand
Brand ROHM
Height 3mm
Length 3mm
Model FMY1AT148
Width 1.3mm
Mount Type Surface
Series FMY1A
Maximum Operating Temperature 150°C
Package Type SOT-25
Pin Count 5
Maximum Collector Emitter Voltage Vceo 50V
Minimum DC Current Gain hFE 120
Transistor Polarity NPN + PNP
Maximum Emitter Base Voltage VEBO 7V
Maximum Collector Base Voltage VCBO 60V
Maximum Power Dissipation Pd 300mW
Maximum DC Collector Current Idc 150mA
Transistor Configuration Common Emitter
Maximum Transition Frequency ft 100MHz

Key Features

  • Features NPN and PNP transistor configuration suitable for common emitter circuits.
  • Maximum collector current of 150 mA ensures effective signal amplification.
  • Supports maximum collector-emitter voltage of 50 V and collector-base voltage up to 60 V.
  • Compact 5-pin SOT-25 package ideal for space-constrained electronics applications.
  • High frequency operation up to 100 MHz suitable for pre-amplifier and oscillator circuits.
  • Maximum power dissipation rating of 300 mW supports moderate power applications.
  • Surface mount mount type for easy PCB integration in modern manufacturing.
  • Operating temperature range extends to 150°C for reliability in demanding environments.

Product Description

ROHM FMY1AT148 is a compact bipolar transistor integrating both NPN and PNP types in a 5-pin SOT-25 surface mount package. Designed for various electronic applications, it suits pre-amplifier differential amplification circuits, high-frequency oscillators, and driver ICs requiring reliable transistor performance with small footprints.

This transistor supports a maximum DC collector current of 150 mA and withstands collector-emitter voltages up to 50 V, making it appropriate for signal amplification and switching in consumer and industrial electronics. The maximum transition frequency of 100 MHz enables high-speed operation in oscillators and RF circuits.

Its ultra-compact dimensions (3 mm by 3 mm by 1.3 mm) and surface mount package facilitate modern PCB assembly and space saving in electronic device designs. The device can operate reliably up to 150°C, assuring stable performance under thermal stress.

The FMY1AT148 transistor is lead-free, aligned with environmental compliance standards. Its NPN + PNP configuration in a common emitter setup offers flexibility in circuit design. Integrates both NPN and PNP transistors for complex circuit applications.

5-pin SOT-25 surface mount package ensures compact footprint. Supports up to 150 mA collector current and 50 V collector-emitter voltage. High-frequency operation at up to 100 MHz for RF and oscillator circuits. Power dissipation rating of 300 mW suitable for moderate power needs.

Operating temperature up to 150°C for robust industrial and commercial use. Dimensions suitable for space-constrained electronic designs. Lead free for environmentally friendly electronics manufacturing.

Typical applications include pre-amplifier differential amplification circuits, driver ICs, and various high-frequency electronic components used in industrial, consumer, and communication devices. This transistor supports modern electronics manufacturing through its surface mount package and environmental compliance.

Explore more Bipolar Transistors from ROHM and other high quality semiconductor components on EnvMart for your industrial and technical needs.

ROHM Bipolar Transistor 150 mA NPN + PNP 50 V 5-Pin SOT-25 FMY1AT148
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Frequently Asked Questions

The maximum collector current for this model is 150 mA, allowing it to effectively amplify signals in various applications.

This transistor supports a maximum collector-emitter voltage of 50 V, making it suitable for signal amplification and switching.

The maximum transition frequency of this transistor is 100 MHz, enabling high-speed operation in RF circuits and oscillators.

The SOT-25 package has dimensions of 3 mm in length, 3 mm in width, and 1.3 mm in height, making it compact for space-constrained applications.

It has a maximum power dissipation rating of 300 mW, suitable for moderate power applications in electronic circuits.

This model can operate reliably at temperatures up to 150°C, ensuring stable performance in demanding environments.

It features an NPN + PNP configuration in a common emitter setup, providing flexibility for various circuit designs.

This transistor has a pin count of 5, which is typical for the SOT-25 package type.

The maximum collector-base voltage for this transistor is 60 V, allowing it to handle significant voltage levels in circuits.

Typical applications include pre-amplifier differential amplification circuits, driver ICs, and various high-frequency electronic components.

The minimum DC current gain (hFE) for this transistor is 120, which is essential for effective signal amplification.

It uses a surface mount type, which facilitates easy PCB integration in modern electronics manufacturing.

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