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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.72mm |
| Length | 4.9mm |
| Model | 2ED2104S06FXUMA1 |
| Width | 3.9mm |
| Mount Type | Surface |
| Series | 2ED2104S06F |
| Output Current | 290mA |
| Maximum Operating Temperature | 150°C |
| Package Type | DSO |
| Minimum Operating Temperature | -40°C |
| Number of outputs | 2 |
| Rise Time | 170ns |
| Standards/Approvals | RoHS |
| Pin Count | 8 |
| Maximum Supply Voltage | 25V |
| Minimum Supply Voltage | 10V |
| Number of Drivers | 2 |
| Fall Time | 35ns |
| Driver Type | General Purpose |
Infineon 2ED2104S06FXUMA1 is a general purpose gate driver designed for high voltage and high speed power MOSFET and IGBT control applications. It features two independent output channels capable of driving loads with 290 mA output current. Packaged in a space-saving 8-pin DSO form factor, this gate driver supports operation up to 25V and ensures reliable switching with fast fall and rise times of 35ns and 170ns respectively.
This driver includes integrated ultra-fast, low resistance bootstrap diode and floating channel design that facilitates bootstrap operation and enhances overall circuit efficiency. It also incorporates independent under voltage lockout on both channels to prevent malfunction under abnormal voltage conditions. The device does not contain any parasitic thyristor structures, eliminating risks of parasitic latch-up even at extreme temperatures and voltages.
With a wide operating temperature range of -40°C to 150°C, it is engineered for robustness in industrial, power management, automotive, and manufacturing applications. The surface mount package ensures easy integration on modern PCBs and efficient thermal management. Compliant with RoHS directives, the product meets environmental regulations and quality standards.
Provides independent high and low side referenced output channels with excellent ruggedness and noise immunity. Operates with no parasitic latch up across all temperature and voltage conditions. Includes integrated ultra-fast, low resistance bootstrap diode for efficient bootstrap operation.
Features independent under voltage lockout for both channels ensuring safe operation. Offers 50% reduced level-shift losses for increased efficiency. Designed for surface mount with compact dimensions (4.9mm length, 3.9mm width, 1.72mm height).
Operating temperature range from -40°C to 150°C suited for demanding industrial environments. RoHS compliant ensuring environmental safety. Suitable for driving power MOSFETs and IGBTs in various industrial and power management applications.
Fall time of 35ns and rise time of 170ns for fast switching performance.
This gate driver is ideal for use in industrial electronics, power conversion systems, HVAC controls, motor drives, and other applications requiring reliable switching and precise gate control. It optimizes power efficiency while maintaining system safety and longevity.
Explore more Infineon Gate Drivers and power management ICs at EnvMart for your industrial and manufacturing needs.
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