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Infineon General Purpose Gate Driver 2 Outputs 290 mA 8-Pin 25V Surface Mount DSO Package 2ED2104S06FXUMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.72mm |
| Length | 4.9mm |
| Model | 2ED2104S06FXUMA1 |
| Width | 3.9mm |
| Mount Type | Surface |
| Series | 2ED2104S06F |
| Output Current | 290mA |
| Maximum Operating Temperature | 150°C |
| Package Type | DSO |
| Minimum Operating Temperature | -40°C |
| Number of outputs | 2 |
| Rise Time | 170ns |
| Standards/Approvals | RoHS |
| Pin Count | 8 |
| Maximum Supply Voltage | 25V |
| Minimum Supply Voltage | 10V |
| Number of Drivers | 2 |
| Fall Time | 35ns |
| Driver Type | General Purpose |
Key Features
- Features a surface mount DSO package for easy PCB installation.
- Operates between minimum 10V and maximum 25V supply voltage.
- Incorporates integrated ultra-fast, low resistance bootstrap diode for efficient bootstrap operation.
- Offers independent under voltage lockout for both channel outputs ensuring reliable operation.
- Rugged design with no parasitic thyristor structures, eliminating parasitic latch up risks across all conditions.
- Typical rise time of 170 ns and fall time of 35 ns enables high-speed switching applications.
- Wide operating temperature range from -40°C to 150°C suitable for harsh environments.
- Compact dimensions with length 4.9 mm, width 3.9 mm, and height 1.72 mm.
Product Description
Infineon 2ED2104S06FXUMA1 is a high voltage, high speed general purpose gate driver IC designed to drive power MOSFET and IGBT devices efficiently. It features dual independent outputs each capable of delivering 290 mA of output current within an 8-pin DSO surface mount package rated for up to 25 volts.
This driver incorporates an integrated ultra-fast, low resistance bootstrap diode and floating channel designed for bootstrap operation, enabling reliable high-side switching.
The device ensures operational logic is maintained even at negative voltages due to its excellent ruggedness and noise immunity. The absence of parasitic thyristor structures prevents any parasitic latch-up throughout the entire temperature and voltage operating range, making it a robust choice for industrial and automotive electronics.
It features independent under voltage lockout circuits for both outputs to protect against supply voltage faults. The rise time of 170 nanoseconds and fall time of 35 nanoseconds allow rapid switching suitable for power control in motor drives, power supplies, and other power management systems.
The device operates reliably across a broad temperature range from -40°C to 150°C and complies with RoHS environmental standards. Its compact footprint (4.9 mm length, 3.9 mm width, 1.72 mm height) makes it suitable for dense PCB designs in electronic components, power management ICs, and semiconductor applications.
Features a surface mount DSO package for easy PCB installation. Operates between minimum 10V and maximum 25V supply voltage. Integrated ultra-fast bootstrap diode for efficient high-side switching. Independent under voltage lockout for both channel outputs.
No parasitic latch-up risk due to absence of parasitic thyristors. Fast switching with rise time of 170 ns and fall time of 35 ns. Wide operating temperature range from -40°C to 150°C. Compact dimensions suitable for space-constrained designs.
Compliant with RoHS standards. Ideal for industrial, automotive, and power management applications.
This product is classified under Gate Drivers within power management ICs and semiconductors at EnvMart. It is designed to support industrial electronics, automotive systems, power supply units, and manufacturing automation sectors. For further selections, buyers are encouraged to explore related Infineon semiconductor products in the power management category at EnvMart.
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Frequently Asked Questions
This model provides an output current of 290 mA for each of its two outputs.
It operates with a supply voltage ranging from a minimum of 10V to a maximum of 25V.
The dimensions of this unit are 4.9 mm in length, 3.9 mm in width, and 1.72 mm in height.
The typical rise time is 170 ns, and the fall time is 35 ns, enabling high-speed switching applications.
It operates reliably within a temperature range of -40°C to 150°C, suitable for harsh environments.
Yes, it incorporates independent under voltage lockout circuits for both channel outputs to ensure reliable operation.
It is packaged in an 8-pin DSO (Dual Small Outline) surface mount package for easy PCB installation.
This model is compliant with RoHS environmental standards.
It is designed for use in industrial electronics, automotive systems, power supply units, and manufacturing automation sectors.
The absence of parasitic thyristor structures in its design eliminates the risk of parasitic latch-up across all conditions.
This model features two independent outputs.
It is classified as a general-purpose gate driver, designed to drive power MOSFET and IGBT devices efficiently.
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