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STMicroelectronics 6-Element Bi-Directional TVS Diode, 300 W, 8-Pin SOIC ITA6V1U1RL

Category TVS Diode Brand STMicroelectronics Condition New

Specifications

Country of Origin India
Brand STMicroelectronics
Height 1.5mm
Length 5mm
Model ITA6V1U1RL
Width 4mm
Mount Type Surface
Series ITAxxU1
Maximum Operating Temperature 125°C
Package Type SOIC
Pin Count 8
Number of Elements per Chip 6
Clamping Voltage VC 12V
Diode Configuration Common Anode
Direction Type Bi-Directional
Minimum Breakdown Voltage Vbr 6.51V
Maximum Reverse Stand-off Voltage Vwm 5V
Peak Pulse Power Dissipation Pppm 300W
Test Current It 1mA
Maximum Peak Pulse Current Ippm 25A
Maximum Reverse Leakage Current 10μA

Key Features

  • Common anode diode configuration for versatile protection.
  • Bi-directional direction type safeguards against voltage spikes both ways.
  • Minimum breakdown voltage of 6.51 V ensures reliable clamping.
  • Peak pulse power dissipation rated at 300 W for high surge capability.
  • Compact surface mount package with 8 pins for easy PCB integration.
  • Maximum reverse stand-off voltage of 5 V suitable for low voltage circuits.
  • Clamping voltage of 12 V limits voltage to safe levels during transients.
  • Maximum peak pulse current of 25 A offers strong transient robustness.

Product Description

STMicroelectronics ITA6V1U1RL is a 6-element bi-directional transient voltage suppressor (TVS) diode array designed for protecting sensitive electronic circuits against transient surges and ESD events. Encased in an 8-pin SOIC surface mount package, it is optimized for space-constrained PCB designs and provides efficient protection in compact formats.

This device features a common anode configuration with a bi-directional direction type allowing protection from voltage surges in both polarities. With a minimum breakdown voltage (Vbr) of 6.51 V, it provides precise clamping to safeguard circuit components by limiting voltage spikes to a maximum clamping voltage (Vc) of 12 V during transient events.

The ITA6V1U1RL model withstands peak pulse power dissipation of 300 W (8/20 μs waveform), ensuring durability against strong transient pulses. It supports a maximum peak pulse current (Ippm) of 25 A, which provides a high level of surge robustness in demanding industrial, consumer electronics, and automotive applications. The diode's maximum operating temperature is rated at 125°C, enabling dependable operation even under elevated thermal conditions.

This TVS diode array offers multiple bidirectional Transil™ protection functions, suitable for guarding data and power lines from electrostatic discharge (ESD) and other transient voltage threats. The product does not carry specific standards or approvals but is RoHS compliant and designed for reliable semiconductor surge protection.

The compact 5 mm length, 4 mm width, and 1.5 mm height SOIC package facilitate easy automated mounting and integration with PCB assemblies in industrial automation, telecommunications, computer systems, power supplies, and other electronic devices requiring robust voltage transient protection.

Common anode diode configuration for versatile protection. Bi-directional direction type safeguards against voltage spikes both ways. Minimum breakdown voltage of 6.51 V ensures reliable clamping. Peak pulse power dissipation rated at 300 W for high surge capability.

Compact surface mount package with 8 pins for easy PCB integration. Maximum reverse stand-off voltage of 5 V suitable for low voltage circuits. Clamping voltage of 12 V limits voltage to safe levels during transients. Maximum peak pulse current of 25 A offers strong transient robustness.

Operating temperature up to 125°C enables stable performance under heat. Multiple bidirectional Transil™ protection functions integrated.

Explore the STMicroelectronics TVS Diode range and similar semiconductor products on EnvMart for advanced circuit protection solutions suitable for industrial, laboratory, electronics manufacturing, and commercial applications.

STMicroelectronics 6-Element Bi-Directional TVS Diode, 300 W, 8-Pin SOIC ITA6V1U1RL
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Frequently Asked Questions

The peak pulse power dissipation is rated at 300 W, ensuring high surge capability during transient events.

The maximum reverse stand-off voltage is 5 V, making it suitable for low voltage circuits.

The clamping voltage is 12 V, which limits voltage to safe levels during transients.

The minimum breakdown voltage is 6.51 V, ensuring reliable clamping during voltage spikes.

It can handle a maximum peak pulse current of 25 A, providing strong transient robustness.

The dimensions of the SOIC package are 5 mm in length, 4 mm in width, and 1.5 mm in height.

It uses a common anode diode configuration, allowing versatile protection against voltage surges.

The maximum operating temperature is rated at 125°C, enabling stable performance under heat.

This model is designed for surface mounting, facilitating easy integration with PCB assemblies.

There are 6 elements per chip in this TVS diode array.

It is suitable for protecting sensitive electronic circuits in industrial, consumer electronics, and automotive applications.

Yes, the product is RoHS compliant, ensuring it meets environmental standards.

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