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onsemi Digital Transistor 50 V NPN Surface SOT-363 6-Pin MUN5235DW1T1G

Category Digital Transistor Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 1.1mm
Length 2.2mm
Model MUN5235DW1T1G
Width 2.2mm
Mount Type Surface
Series MUN5235DW1
Maximum Operating Temperature 150°C
Package Type SOT-363 (SC-88)
Pin Count 6
Maximum Collector Emitter Voltage Vceo 50V
Minimum DC Current Gain hFE 80
Transistor Polarity NPN
Maximum Collector Base Voltage VCBO 50V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 256mW
Transistor Configuration Isolated

Key Features

  • This transistor integrates dual resistors for optimized digital driving performance.
  • It features a maximum collector emitter voltage of 50 V suitable for various electronic circuits.
  • The device supports a maximum power dissipation of 256 mW enabling reliable operation at high speeds.
  • Its minimum DC current gain (hFE) of 80 ensures effective current amplification.
  • The transistor is compact with dimensions of 2.2 mm length, 2.2 mm width, and 1.1 mm height.
  • Designed for surface mounting, it has an isolated transistor configuration in a 6-pin SOT-363 package.
  • It meets automotive standard AEC-Q101 for high reliability in automotive environments.
  • Operates safely up to a maximum temperature of 150°C for demanding industrial use.

Product Description

onsemi MUN5235DW1T1G digital transistor is a dual resistor NPN device in a compact SOT-363 (SC-88) 6-pin surface mount package. With a maximum collector emitter voltage of 50 V and power dissipation capability of 256 mW, it offers efficient switching and amplification for digital electronics.

The transistor configuration is isolated and designed for easy mounting on printed circuit boards. Its minimum DC current gain of 80 guarantees strong current amplification, suitable for various industrial and automotive applications.

Measuring 2.2 mm in length and width and 1.1 mm in height, this component is small and space-saving, fitting modern compact electronic designs. The MUN5235DW1 series conforms to the automotive standard AEC-Q101, offering reliability under automotive operating conditions.

Designed as a bias resistor transistor, it incorporates integrated resistors, allowing it to be driven directly by digital sources without external resistors. This simplifies circuit design in digital switching and signal processing applications.

This transistor integrates dual resistors for optimized digital driving performance. It features a maximum collector emitter voltage of 50 V suitable for various electronic circuits. The device supports a maximum power dissipation of 256 mW enabling reliable operation at high speeds.

Its minimum DC current gain (hFE) of 80 ensures effective current amplification. The transistor is compact with dimensions of 2.2 mm length, 2.2 mm width, and 1.1 mm height. Designed for surface mounting, it has an isolated transistor configuration in a 6-pin SOT-363 package.

It meets automotive standard AEC-Q101 for high reliability in automotive environments. Operates safely up to a maximum temperature of 150°C for demanding industrial use. Ideal for use in digital switching, signal amplification, and integrated circuits.

Dual transistor design with integrated bias resistors enables direct driving from digital sources.

This product is suitable for industrial electronics, automotive electronics, signal processing, and digital switching applications where compact size and integrated resistor biasing are required. It simplifies circuit design and enhances reliability in complex systems.

Explore a wide range of Digital Transistors and bipolar transistors at EnvMart to find the perfect component for your industrial and automotive electronic needs.

onsemi Digital Transistor 50 V NPN Surface SOT-363 6-Pin MUN5235DW1T1G
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Frequently Asked Questions

The maximum collector emitter voltage for this transistor is 50 V, making it suitable for various electronic circuits.

This model supports a maximum power dissipation of 256 mW, enabling reliable operation at high speeds.

The minimum DC current gain (hFE) of this digital transistor is 80, ensuring effective current amplification.

This transistor has dimensions of 2.2 mm in length, 2.2 mm in width, and 1.1 mm in height, making it compact for modern electronic designs.

It comes in a SOT-363 (SC-88) 6-pin surface mount package, designed for easy mounting on printed circuit boards.

The maximum operating temperature for this transistor is 150°C, suitable for demanding industrial applications.

Yes, it meets the automotive standard AEC-Q101, ensuring high reliability in automotive environments.

The transistor configuration is isolated, which simplifies circuit design and enhances reliability.

It is an NPN digital transistor, integrating dual resistors for optimized digital driving performance.

This model is suitable for industrial electronics, automotive electronics, signal processing, and digital switching applications.

The MUN5235DW1T1G has a pin count of 6, which is typical for its SOT-363 package.

The integrated resistor design allows for direct driving from digital sources without the need for external resistors, simplifying circuit design.

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