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| Country of Origin | China |
|---|---|
| Brand | Nexperia |
| Height | 1.1mm |
| Length | 3mm |
| Model | PBHV9050T,215 |
| Width | 1.4mm |
| Mount Type | Surface |
| Series | PBHV9050T |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | -500V |
| Minimum DC Current Gain hFE | 80 |
| Transistor Polarity | PNP |
| Maximum Emitter Base Voltage VEBO | -6V |
| Maximum Collector Base Voltage VCBO | -500V |
| Maximum Power Dissipation Pd | 300mW |
| Maximum DC Collector Current Idc | -150mA |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 50MHz |
Nexperia PBHV9050T,215 PNP Transistor is a high voltage bipolar transistor designed for discrete semiconductor applications. Featuring a collector current maximum of -150 mA and a collector emitter voltage of -500 V, this transistor is packaged in a compact 3-pin SOT-23 surface-mount package. It is ideal for use in electronic circuits requiring stable performance under demanding voltage and current conditions.
The transistor supports continuous operation over a temperature range from -55°C to 150°C, making it suitable for industrial, automotive electronics, and general electronic circuit applications. With a power dissipation of 300 mW and a minimum DC current gain of 80, it delivers reliable amplification and switching performance.
This device complies with RoHS standards, adhering to environmental safety requirements. Its high transition frequency of 50 MHz supports fast switching operations in signal processing circuits. The compact physical dimensions of 3 mm length, 1.4 mm width, and 1.1 mm height enable dense circuit board layouts.
The transistor's single configuration and PNP polarity make it a versatile choice for controlling and amplifying low power signals. The maximum emitter base voltage of -6 V and collector base voltage of -500 V contribute to its high-voltage tolerance in diverse electronic applications.
This transistor has a single transistor configuration with PNP polarity. Maximum power dissipation rated at 300 mW ensures reliable operation. Operating temperature ranges from -55°C to 150°C for versatile applications. Minimum DC current gain of 80 provides efficient signal amplification.
Compact size with dimensions: length 3 mm, width 1.4 mm, height 1.1 mm. Equipped with RoHS compliance for environmental safety. Maximum transition frequency is 50 MHz for high-speed switching. Maximum emitter base voltage rated at -6 V and collector base voltage at -500 V.
Pin count of 3 suitable for standard transistor circuit layouts.
Applications include industrial electronics, automotive circuits, consumer electronics, and power management systems where small, reliable PNP transistors are required. The device is manufactured in China and is supplied new in reel packaging, ready for automated insertion in assembly processes.
Explore the EnvMart catalog for a wide selection of high quality Bipolar Transistors and other discrete semiconductor components for your electronic design and manufacturing needs.
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