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Nexperia High Voltage NPN Transistor 500 mA, 400 V, 3-Pin SOT-23 PBHV8540T,215

Category Bipolar Transistors Brand Nexperia Condition New

Specifications

Country of Origin China
Brand Nexperia
Height 1.1mm
Length 3mm
Model PBHV8540T,215
Width 2.5mm
Mount Type Surface
Series PBHV8540T
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo 400V
Minimum DC Current Gain hFE 100
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 6V
Maximum Collector Base Voltage VCBO 500V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 300mW
Maximum DC Collector Current Idc 500mA
Transistor Configuration Single
Maximum Transition Frequency ft 30MHz

Key Features

  • Maximum DC collector current of 500 mA ensuring moderate power handling.
  • Maximum collector emitter voltage rating of 400 V for high voltage applications.
  • Compact surface mount SOT-23 package for space-saving PCB designs.
  • NPN transistor configuration suitable for general amplification and switching.
  • Maximum power dissipation of 300 mW for reliable thermal performance.
  • Automotive standard compliant with AEC-Q101 ensuring quality and durability.
  • Wide operating temperature range from -55°C to 150°C suitable for harsh environments.
  • High minimum DC current gain (hFE) of 100 for effective signal amplification.

Product Description

The Nexperia PBHV8540T,215 is a high-voltage NPN bipolar transistor designed for efficient switching and amplification in electronic circuits. With a maximum collector emitter voltage of 400 V and a collector current of up to 500 mA, it is well-suited for applications requiring moderate power handling within a compact footprint.

This transistor comes in a 3-pin SOT-23 surface mount package, enabling compact and efficient PCB layouts in industrial, automotive, and consumer electronics. It boasts a maximum power dissipation of 300 mW and features a high minimum DC current gain (hFE) of 100, ensuring effective amplification with less input drive.

Designed according to AEC-Q101 automotive standards, this transistor offers enhanced reliability and robustness, making it suitable for automotive and industrial applications requiring stable performance over a wide temperature range from -55°C up to 150°C.

The compact physical dimensions of length 3 mm, width 2.5 mm, and height 1.1 mm support use in densely packed circuits. Its high maximum collector base voltage of 500 V and emitter base voltage of 6 V provide additional tolerance against voltage spikes and transients.

Typical use cases include power management circuits, signal amplification, and switching tasks in power supply modules, automotive electronics, industrial control systems, and consumer devices.

Maximum DC collector current of 500 mA ensuring moderate power handling. Maximum collector emitter voltage rating of 400 V for high voltage applications. Compact surface mount SOT-23 package for space-saving PCB designs.

NPN transistor configuration suitable for general amplification and switching. Maximum power dissipation of 300 mW for reliable thermal performance. Automotive standard compliant with AEC-Q101 ensuring quality and durability.

Wide operating temperature range from -55°C to 150°C suitable for harsh environments. High minimum DC current gain (hFE) of 100 for effective signal amplification. Small dimensions: length 3 mm, width 2.5 mm, height 1.1 mm.

This Nexperia transistor model PBHV8540T,215 is a reliable choice for demanding industrial, automotive, and electronic design projects. Explore more Bipolar Transistors and semiconductor components at EnvMart for your engineering needs.

Nexperia High Voltage NPN Transistor 500 mA, 400 V, 3-Pin SOT-23 PBHV8540T,215
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Frequently Asked Questions

The maximum collector emitter voltage rating of this transistor is 400 V, making it suitable for high voltage applications.

This model can handle a maximum DC collector current of 500 mA, ensuring moderate power handling capabilities.

The Nexperia PBHV8540T,215 comes in a compact SOT-23 surface mount package, which is designed for space-saving PCB layouts.

It operates over a wide temperature range from -55°C to 150°C, suitable for harsh environments.

The minimum DC current gain (hFE) of this transistor is 100, which allows for effective signal amplification.

The maximum power dissipation for this model is 300 mW, ensuring reliable thermal performance during operation.

Yes, this transistor is compliant with AEC-Q101 automotive standards, ensuring quality and durability for automotive applications.

The physical dimensions of this transistor are 3 mm in length, 2.5 mm in width, and 1.1 mm in height.

The maximum collector base voltage (VCBO) for this model is 500 V, providing additional tolerance against voltage spikes.

This transistor is suitable for power management circuits, signal amplification, and switching tasks in various electronic devices.

The maximum emitter base voltage (VEBO) for this transistor is 6 V, which is important for its operational limits.

The maximum transition frequency (ft) of this transistor is 30 MHz, which indicates its capability for high-frequency applications.

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