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| Country of Origin | China |
|---|---|
| Brand | Nexperia |
| Height | 1.1mm |
| Length | 3mm |
| Model | PBHV8540T,215 |
| Width | 2.5mm |
| Mount Type | Surface |
| Series | PBHV8540T |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | 400V |
| Minimum DC Current Gain hFE | 100 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 6V |
| Maximum Collector Base Voltage VCBO | 500V |
| Automotive Standard | AEC-Q101 |
| Maximum Power Dissipation Pd | 300mW |
| Maximum DC Collector Current Idc | 500mA |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 30MHz |
The Nexperia PBHV8540T,215 is a high-voltage NPN bipolar transistor designed for efficient switching and amplification in electronic circuits. With a maximum collector emitter voltage of 400 V and a collector current of up to 500 mA, it is well-suited for applications requiring moderate power handling within a compact footprint.
This transistor comes in a 3-pin SOT-23 surface mount package, enabling compact and efficient PCB layouts in industrial, automotive, and consumer electronics. It boasts a maximum power dissipation of 300 mW and features a high minimum DC current gain (hFE) of 100, ensuring effective amplification with less input drive.
Designed according to AEC-Q101 automotive standards, this transistor offers enhanced reliability and robustness, making it suitable for automotive and industrial applications requiring stable performance over a wide temperature range from -55°C up to 150°C.
The compact physical dimensions of length 3 mm, width 2.5 mm, and height 1.1 mm support use in densely packed circuits. Its high maximum collector base voltage of 500 V and emitter base voltage of 6 V provide additional tolerance against voltage spikes and transients.
Typical use cases include power management circuits, signal amplification, and switching tasks in power supply modules, automotive electronics, industrial control systems, and consumer devices.
Maximum DC collector current of 500 mA ensuring moderate power handling. Maximum collector emitter voltage rating of 400 V for high voltage applications. Compact surface mount SOT-23 package for space-saving PCB designs.
NPN transistor configuration suitable for general amplification and switching. Maximum power dissipation of 300 mW for reliable thermal performance. Automotive standard compliant with AEC-Q101 ensuring quality and durability.
Wide operating temperature range from -55°C to 150°C suitable for harsh environments. High minimum DC current gain (hFE) of 100 for effective signal amplification. Small dimensions: length 3 mm, width 2.5 mm, height 1.1 mm.
This Nexperia transistor model PBHV8540T,215 is a reliable choice for demanding industrial, automotive, and electronic design projects. Explore more Bipolar Transistors and semiconductor components at EnvMart for your engineering needs.
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