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Nexperia High Voltage 150 mA NPN Transistor 500 V, Surface Mount SOT-23 PMBTA45,215

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Nexperia High Voltage 150 mA NPN Transistor 500 V, Surface Mount SOT-23 PMBTA45,215

Name: Nexperia High Voltage 150 mA NPN Transistor 500 V, Surface Mount SOT-23 PMBTA45,215
Brand: Nexperia
SKU: 233778
Price: 0.3 USD
Availability: InStock

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Category Bipolar Transistors Brand Nexperia Condition New

Specifications

Country of Origin	China
Brand	Nexperia
Height	1.1mm
Length	3mm
Model	PMBTA45,215
Width	1.4mm
Mount Type	Surface
Series	PMBTA45
Maximum Operating Temperature	150°C
Package Type	SOT-23
Minimum Operating Temperature	-55°C
Standards/Approvals	RoHS
Pin Count	3
Maximum Collector Emitter Voltage Vceo	500V
Minimum DC Current Gain hFE	50
Transistor Polarity	NPN
Maximum Emitter Base Voltage VEBO	6V
Maximum Collector Base Voltage VCBO	500V
Maximum Power Dissipation Pd	300mW
Maximum DC Collector Current Idc	150mA
Transistor Configuration	Single
Maximum Transition Frequency ft	35MHz

Key Features

This transistor features a maximum collector current of 150 mA.
It supports a maximum collector-emitter voltage of 500 V for high voltage applications.
The compact SOT-23 surface mount package suits space-constrained electronic designs.
The device provides a minimum DC current gain (hFE) of 50.
It operates safely from -55°C to 150°C ambient temperature range.
The maximum power dissipation is 300 mW, suitable for moderate power circuits.
Its transition frequency reaches up to 35 MHz for high-frequency operation.
The transistor polarity is NPN with single transistor configuration.

Product Description

Nexperia PMBTA45,215 is a high voltage bipolar NPN transistor designed for reliable performance in electronic circuits requiring up to 150 mA collector current and voltage withstand of 500 V. Its surface mount SOT-23 package enables efficient PCB space utilization, making it suitable for compact and densely populated circuit boards.

Operating within a broad temperature range from -55°C to 150°C, this transistor ensures durability and stable operation even in demanding industrial and commercial environments. The device also features a minimum DC current gain of 50, offering efficient amplification for signal processing and switching applications.

The PMBTA45,215 can dissipate up to 300 mW of power, appropriate for low-to-moderate power tasks. With a transition frequency of 35 MHz, it is well-suited for high-frequency applications including amplifiers and high-speed switching.

Its NPN polarity and single transistor configuration provide compatibility with common bipolar junction transistor circuits. The three-pin layout in the SOT-23 package eases automated surface mounting processes, helping manufacturers improve assembly efficiency.

This transistor features a maximum collector current of 150 mA. It supports a maximum collector-emitter voltage of 500 V. Compact SOT-23 surface mount package. Minimum DC current gain (hFE) of 50. Operating temperature range: -55°C to 150°C.

Maximum power dissipation of 300 mW. High transition frequency of 35 MHz. NPN transistor polarity with single transistor configuration. Pin count: 3, package size approx. 3 mm x 1.4 mm x 1.1 mm. RoHS compliant and made in China.

This transistor is ideal for industrial, commercial, automotive electronics, and general purpose electronic designs requiring high voltage and high frequency performance. It provides a reliable component solution for amplification, switching, and signal processing in complex electronic assemblies. Explore more Bipolar Transistors and components on EnvMart to meet your electronic design needs.