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Nexperia Small Signal NPN Transistor BC846S,115 100 mA 65 V 6-Pin SOT-363 BC846S,115

Category Bipolar Transistors Brand Nexperia Condition New

Specifications

Country of Origin Malaysia
Brand Nexperia
Height 1.1mm
Length 2.2mm
Model BC846S,115
Width 1.35mm
Mount Type Surface
Series BC846S
Maximum Operating Temperature 150°C
Package Type SOT-363
Minimum Operating Temperature -65°C
Pin Count 6
Maximum Collector Emitter Voltage Vceo 65V
Minimum DC Current Gain hFE 110
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 65V
Maximum Collector Base Voltage VCBO 80V
Maximum Power Dissipation Pd 20mW
Maximum DC Collector Current Idc 100mA
Transistor Configuration Isolated
onsemi Transistor, 100 mA NPN, 65 V, 6-Pin SOT-363Brand onsemi

Key Features

  • Package type is SOT-363 suitable for surface mount applications.
  • Transistor polarity is NPN with isolated configuration for versatile circuit uses.
  • Rated maximum power dissipation is 20 mW ensuring low power operation.
  • Maximum collector base voltage of 80 V and emitter base voltage of 65 V.
  • Operates within temperature range from -65°C to 150°C for reliable performance.
  • Minimum DC current gain (hFE) is 110 supporting good amplification.
  • Pin count is 6, suitable for detailed circuit integration.

Product Description

Nexperia BC846S,115 is a small signal NPN bipolar transistor designed for surface mount technology circuits. Rated for a maximum DC collector current of 100 mA and a collector-emitter voltage of 65 V, it is well suited for low power amplification and switching applications in industrial, telecommunications, and consumer electronic devices.

The transistor features a compact SOT-363 6-pin package, enabling space-saving designs on densely populated PCBs. With a transistor configuration that is isolated and a polarization of NPN type, it provides reliable switching characteristics.

It offers robust operation across a wide temperature range from -65°C minimum to a maximum of 150°C, making it suitable for industrial environments. The minimum DC current gain (hFE) of 110 ensures effective signal amplification while maintaining low noise.

Additional electrical ratings include a maximum collector base voltage of 80 V and maximum emitter base voltage of 65 V, allowing stable performance in diverse circuits. The transistor dissipates up to 20 mW of power, making it efficient for low power applications.

Dimensions are precisely 2.2 mm in length, 1.35 mm in width, and 1.1 mm in height, supporting compact electronic assemblies. Its pin count of 6 facilitates multiple connection options per circuit design.

Package type is SOT-363 facilitating surface mount integration. Maximum DC collector current rating of 100 mA. Collector-emitter voltage rating of 65 V for reliable switching. Robust temperature rating from -65°C to 150°C supports harsh environments.

Minimum current gain (hFE) of 110 enhances amplification effectiveness. Compact physical dimensions suitable for dense PCB layouts. 6-pin configuration for flexible circuit design. Manufactured in Malaysia ensuring high-quality standards.

This transistor is optimized for use in electronic manufacturing, telecommunications equipment, instrumentation, and automotive systems not requiring automotive certification. It is a highly reliable component for engineers designing compact, low-power circuits requiring stable transistor performance.

Explore more electronic components and semiconductors in the Bipolar Transistors category on EnvMart for comprehensive industrial and consumer electronics solutions.

Nexperia Small Signal NPN Transistor BC846S,115 100 mA 65 V 6-Pin SOT-363 BC846S,115
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Frequently Asked Questions

The maximum DC collector current for this model is rated at 100 mA.

It comes in a SOT-363 package type, which is suitable for surface mount applications.

The maximum collector-emitter voltage rating for this transistor is 65 V.

The minimum DC current gain (hFE) is 110, which supports effective signal amplification.

It operates within a temperature range from -65°C to 150°C.

The dimensions are 2.2 mm in length, 1.35 mm in width, and 1.1 mm in height.

The maximum power dissipation is rated at 20 mW, ensuring low power operation.

This model features an isolated NPN transistor configuration.

The maximum collector base voltage is rated at 80 V.

It has a pin count of 6, suitable for detailed circuit integration.

This transistor is manufactured in Malaysia.

It is optimized for use in electronic manufacturing, telecommunications equipment, instrumentation, and automotive systems not requiring automotive certification.

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