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STMicroelectronics 8 Darlington Transistor NPN 500 mA 50 V HFE 1000 18-Pin PDIP ULN2804A

Category Darlington Transistor Brand STMicroelectronics Condition New

Specifications

Country of Origin India
Brand STMicroelectronics
Height 3.93mm
Length 23.24mm
Model ULN2804A
Mount Type Through Hole
Maximum Operating Temperature 85°C
Package Type PDIP
Minimum Operating Temperature -20°C
Pin Count 18
Maximum Continuous Collector Current Ic 500mA
Maximum Collector Emitter Voltage Vceo 50V
Number of Elements per Chip 8
Minimum DC Current Gain hFE 1000
Transistor Polarity NPN
Maximum Collector Emitter Saturation Voltage VceSAT 1.6V
Maximum Power Dissipation Pd 2.25W
STMicroelectronics ULN2804A Octal NPN Darlington Pair, 0.5 A 50 V HFE 1000, 18-Pin PDIPBrand: STMicroelectronics
STMicroelectronics ULN2804A 8 Darlington Transistor NPN, 500 mA 50 V HFE 1000, 18-Pin PDIP

Key Features

  • Features 8 Darlington pairs integrated in a single chip.
  • Supports maximum continuous collector current of 500 mA per channel.
  • Maximum collector emitter voltage is 50 volts ensuring robust performance.
  • High DC current gain (hFE) of 1000 for efficient switching.
  • Package type is PDIP for through-hole mounting.
  • Operates reliably between temperatures -20°C to 85°C.
  • Maximum power dissipation is 2.25 W for dependable power handling.
  • Transistor polarity is NPN compatible for versatile circuit design.

Product Description

STMicroelectronics ULN2804A is an 8 Darlington transistor array specifically designed for high voltage and current switching applications. Rated for 500 mA maximum continuous collector current and 50 V collector emitter voltage, this NPN transistor array comes in an 18-Pin PDIP package suitable for through-hole mounting.

The device includes 8 Darlington pairs with a high DC current gain (hFE) of 1000, enabling efficient interfacing with TTL or CMOS logic levels. Integral suppression diodes protect against inductive load spikes, making it ideal for driving relays, solenoids, and other inductive loads in industrial control, automation, and electronic power switching.

Operating over a temperature range from -20°C up to 85°C, the ULN2804A is reliable for both commercial and industrial use. The maximum power dissipation rating of 2.25 W ensures stable operation under typical load conditions.

The 18 pins are arranged with inputs opposite the outputs, allowing straightforward PCB layout and minimizing board complexity. The transistor polarity is NPN, common in industrial transistor arrays.

Contains 8 Darlington transistor pairs integrated into a single chip. Maximum continuous collector current per channel: 500 mA. Maximum collector emitter voltage: 50 V. Minimum DC current gain (hFE): 1000 for high amplification.

Package type: 18-Pin PDIP, through hole mount. Operating temperature range: -20°C to 85°C. Maximum power dissipation: 2.25 W. Maximum collector emitter saturation voltage (VceSAT): 1.6 V. Suitable for driving inductive loads with integral suppression diodes.

Ideal for industrial control, automation, and power electronics applications.

This STMicroelectronics ULN2804A transistor array is widely used in electronic components, power and connector solutions, and discrete semiconductor devices. It fits applications requiring reliable power switching and high gain at the component level.

Explore more Darlington Transistor arrays and other semiconductor components in EnvMart's Electronics & Electricals category for your industrial and electronic design needs.

STMicroelectronics 8 Darlington Transistor NPN 500 mA 50 V HFE 1000 18-Pin PDIP ULN2804A
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Frequently Asked Questions

The ULN2804A supports a maximum continuous collector current of 500 mA per channel.

The maximum collector emitter voltage for the ULN2804A is 50 V.

This model comes in an 18-Pin PDIP package suitable for through-hole mounting.

It operates reliably between -20°C and 85°C.

The ULN2804A integrates 8 Darlington pairs into a single chip.

The minimum DC current gain (hFE) for the ULN2804A is 1000.

The maximum power dissipation for this model is 2.25 W.

This model features NPN transistor polarity, which is common in industrial applications.

The maximum collector emitter saturation voltage (VceSAT) for this transistor array is 1.6 V.

It is suitable for driving inductive loads such as relays and solenoids, thanks to its integral suppression diodes.

The 18 pins are arranged with inputs opposite the outputs, facilitating straightforward PCB layout.

This model is designed for high voltage and current switching applications, including industrial control and automation.

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