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| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 3.93mm |
| Length | 23.24mm |
| Model | ULN2804A |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 85°C |
| Package Type | PDIP |
| Minimum Operating Temperature | -20°C |
| Pin Count | 18 |
| Maximum Continuous Collector Current Ic | 500mA |
| Maximum Collector Emitter Voltage Vceo | 50V |
| Number of Elements per Chip | 8 |
| Minimum DC Current Gain hFE | 1000 |
| Transistor Polarity | NPN |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.6V |
| Maximum Power Dissipation Pd | 2.25W |
| STMicroelectronics ULN2804A Octal NPN Darlington Pair, 0.5 A 50 V HFE | 1000, 18-Pin PDIPBrand: STMicroelectronics |
| STMicroelectronics ULN2804A 8 Darlington Transistor NPN, 500 mA 50 V HFE | 1000, 18-Pin PDIP |
STMicroelectronics ULN2804A is an 8 Darlington transistor array specifically designed for high voltage and current switching applications. Rated for 500 mA maximum continuous collector current and 50 V collector emitter voltage, this NPN transistor array comes in an 18-Pin PDIP package suitable for through-hole mounting.
The device includes 8 Darlington pairs with a high DC current gain (hFE) of 1000, enabling efficient interfacing with TTL or CMOS logic levels. Integral suppression diodes protect against inductive load spikes, making it ideal for driving relays, solenoids, and other inductive loads in industrial control, automation, and electronic power switching.
Operating over a temperature range from -20°C up to 85°C, the ULN2804A is reliable for both commercial and industrial use. The maximum power dissipation rating of 2.25 W ensures stable operation under typical load conditions.
The 18 pins are arranged with inputs opposite the outputs, allowing straightforward PCB layout and minimizing board complexity. The transistor polarity is NPN, common in industrial transistor arrays.
Contains 8 Darlington transistor pairs integrated into a single chip. Maximum continuous collector current per channel: 500 mA. Maximum collector emitter voltage: 50 V. Minimum DC current gain (hFE): 1000 for high amplification.
Package type: 18-Pin PDIP, through hole mount. Operating temperature range: -20°C to 85°C. Maximum power dissipation: 2.25 W. Maximum collector emitter saturation voltage (VceSAT): 1.6 V. Suitable for driving inductive loads with integral suppression diodes.
Ideal for industrial control, automation, and power electronics applications.
This STMicroelectronics ULN2804A transistor array is widely used in electronic components, power and connector solutions, and discrete semiconductor devices. It fits applications requiring reliable power switching and high gain at the component level.
Explore more Darlington Transistor arrays and other semiconductor components in EnvMart's Electronics & Electricals category for your industrial and electronic design needs.
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