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Nexperia Transistor NPN Small Signal 300 mA 160 V 3-Pin SOT-23 PMBT5551,215

Category Bipolar Transistors Brand Nexperia Condition New

Specifications

Country of Origin India
Brand Nexperia
Height 1.1mm
Length 3mm
Model PMBT5551,215
Width 2.5mm
Mount Type Surface
Series PMBT5551
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -65°C
Standards/Approvals RoHS
Pin Count 3
Maximum Collector Emitter Voltage Vceo 160V
Minimum DC Current Gain hFE 30
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 6V
Maximum Collector Base Voltage VCBO 180V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 250mW
Maximum DC Collector Current Idc 300mA
Transistor Configuration Single
Maximum Transition Frequency ft 300MHz
onsemi MMBT5551LT1G Transistor, 600 mA NPN, 160 V, 3-Pin SOT-23Brand onsemi

Key Features

  • The device comes in a compact 3-pin SOT-23 package ideal for space-saving PCB design.
  • Maximum collector base voltage is rated at 180 V, allowing for robust voltage tolerance.
  • Minimum DC current gain (hFE) is 30, ensuring reliable amplification in electronic circuits.
  • Maximum transition frequency reaches 300 MHz, suitable for high-frequency applications.
  • Power dissipation of the transistor is max 250 mW, enabling efficient heat management.
  • Operating temperature range spans from -65°C to 150°C, supporting diverse environments.
  • The transistor polarity is NPN, common for amplifier and switching applications.
  • Compliant with RoHS standards and qualified to the AEC-Q101 automotive standard.

Product Description

Nexperia PMBT5551,215 transistor is an NPN bipolar small signal transistor designed for surface mounting in compact electronic assemblies. It features a maximum DC collector current of 300 mA and a maximum collector-emitter voltage of 160 V.

Packaged in a SOT-23 form factor with three pins, it allows for efficient space utilization on printed circuit boards (PCBs), making it suitable for portable and consumer electronic devices, automotive electronics, and industrial control systems.

The transistor offers a minimum DC current gain (hFE) of 30, supporting signal amplification applications. Its high transition frequency of up to 300 MHz makes it well-suited for high-speed switching and radio frequency (RF) circuits.

With a maximum power dissipation of 250 mW and an operating temperature range from -65°C to 150°C, this transistor ensures dependable performance in harsh environments, including automotive and industrial applications. It meets the AEC-Q101 automotive quality standard, aligning with stringent reliability requirements.

The device complies with RoHS directives, ensuring environmentally friendly manufacturing. Its compact dimensions (3 mm length, 2.5 mm width, 1.1 mm height) enable integration in space-limited applications.

The device comes in a compact 3-pin SOT-23 package ideal for space-saving PCB design. Maximum collector base voltage is rated at 180 V, allowing for robust voltage tolerance. Minimum DC current gain (hFE) is 30, ensuring reliable amplification in electronic circuits.

Maximum transition frequency reaches 300 MHz, suitable for high-frequency applications. Power dissipation of the transistor is max 250 mW, enabling efficient heat management. Operating temperature range spans from -65°C to 150°C, supporting diverse environments.

The transistor polarity is NPN, common for amplifier and switching applications. Compliant with RoHS standards and qualified to the AEC-Q101 automotive standard. Dimensions are compact: length 3 mm, width 2.5 mm, and height 1.1 mm, facilitating integration.

This Nexperia transistor is widely used in industrial, automotive, consumer electronics, and telecommunications sectors for signal amplification, switching, and other analog applications. It is ideal for PCB designers and engineers seeking reliable, high-performance bipolar transistors.

Explore related Bipolar Transistors and electronic component solutions on EnvMart for your design and manufacturing needs.

Nexperia Transistor NPN Small Signal 300 mA 160 V 3-Pin SOT-23 PMBT5551,215
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Frequently Asked Questions

The maximum collector-emitter voltage (Vceo) for this transistor is rated at 160 V.

The minimum DC current gain (hFE) for this model is 30, which supports reliable signal amplification.

The maximum power dissipation of this transistor is 250 mW, allowing for efficient heat management.

This model has a maximum transition frequency of 300 MHz, making it suitable for high-frequency applications.

The dimensions of the SOT-23 package are 3 mm in length, 2.5 mm in width, and 1.1 mm in height.

The operating temperature range for this transistor spans from -65°C to 150°C, supporting diverse environments.

This model is an NPN bipolar small signal transistor, commonly used for amplification and switching applications.

Yes, it is compliant with RoHS standards and qualified to the AEC-Q101 automotive standard.

The maximum DC collector current for this transistor is 300 mA.

This transistor is designed for surface mounting, making it suitable for compact electronic assemblies.

This transistor is widely used in industrial, automotive, consumer electronics, and telecommunications for signal amplification and switching.

The maximum collector-base voltage (VCBO) for this model is rated at 180 V.

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