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onsemi Small Signal Diode 100 V 300 mA Surface Mount SOT-23 Package 3-Pin 1N914TR

Category Semiconductor Diodes Brand onsemi Condition New

Specifications

Country of Origin India
Diameter 1.53mm
Brand onsemi
Height 1.15mm
Length 3.1mm
Model 1N914TR
Width 1.43mm
Mount Type Surface Mount
Series 1N914
Maximum Operating Temperature 175°C
Package Type SOT-23
Minimum Operating Temperature -65°C
Pin Count 3
Maximum Continuous Forward Current If 300mA
Peak Reverse Repetitive Voltage Vrrm 100V
Diode Configuration Single
Rectifier Type Small Signal
Peak Reverse Current Ir 5μA
Peak Non-Repetitive Forward Surge Current Ifsm 4A
Maximum Forward Voltage Vf 1V
Peak Reverse Recovery Time trr 4ns

Key Features

  • This diode features a maximum continuous forward current of 300 mA.
  • It has a peak reverse repetitive voltage of 100 V.
  • The forward voltage drop is maximum 1 V for efficient switching.
  • Peak reverse current is very low at 5 microamps ensuring low leakage.
  • Peak reverse recovery time is only 4 nanoseconds for fast switching applications.
  • Operating temperature ranges from -65°C to 175°C allowing use in harsh environments.
  • The package dimensions are compact with a length of 3.1 mm, width of 1.43 mm, and height of 1.15 mm.
  • This diode is ideal for electronic designs requiring high-speed switching and low power dissipation.

Product Description

onsemi 1N914TR is a Small Signal Diode designed for high-speed switching applications in electronic circuit designs. It supports a maximum continuous forward current of 300 mA and a peak reverse repetitive voltage up to 100 V, making it suitable for moderate voltage and current requirements.

The diode comes in a compact Surface Mount SOT-23 package with 3 pins, offering easy integration on printed circuit boards (PCBs) with minimal space usage. Its maximum forward voltage drop is 1 V, contributing to efficiency in switching circuits. The device exhibits a very low peak reverse current of 5 microamps, minimizing leakage current in reverse bias.

With a peak reverse recovery time of only 4 nanoseconds, the 1N914TR provides rapid switching performance necessary for applications in power management, signal processing, and communication devices. It can operate reliably over a broad temperature range from -65°C to 175°C, suitable for industrial and commercial environments requiring robust diodes.

The SOT-23 package size is 3.1 mm in length, 1.43 mm in width, and 1.15 mm in height, allowing for compact assembly. This diode belongs to the 1N914 series and is a single small signal rectifier type commonly used in switching applications.

This diode features a maximum continuous forward current of 300 mA. Peak reverse repetitive voltage rating is 100 V. Maximum forward voltage is 1 V. Peak reverse current is 5 microamps. The device has a very fast peak reverse recovery time of 4 nanoseconds.

Operating temperature is from -65°C to 175°C. Compact Surface Mount SOT-23 3-pin package.

onsemi provides quality semiconductor solutions widely used in industrial, communication, automotive, and consumer electronic devices. This diode is suitable for designers requiring reliable switching elements with low voltage drop and fast switching speeds in a surface mount form factor.

Explore a broad range of Semiconductor Diodes and related components on EnvMart for your electronic design needs.

onsemi Small Signal Diode 100 V 300 mA Surface Mount SOT-23 Package 3-Pin 1N914TR
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Frequently Asked Questions

The maximum continuous forward current of this diode is 300 mA.

The peak reverse repetitive voltage rating for this model is 100 V.

The maximum forward voltage drop is 1 V.

The peak reverse recovery time is 4 nanoseconds.

The operating temperature range is from -65°C to 175°C.

The SOT-23 package dimensions are 3.1 mm in length, 1.43 mm in width, and 1.15 mm in height.

The peak reverse current is very low at 5 microamps.

This model is a single small signal rectifier type diode.

The SOT-23 package has a pin count of 3.

The maximum non-repetitive forward surge current is 4 A.

The diode is manufactured in India.

This diode is suitable for high-speed switching applications in power management, signal processing, and communication devices.

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