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Nexperia Resistor-Equipped Transistor Dual NPN + PNP 100 mA 50 V 6-Pin SOT PUMD12,115

Category Bipolar Transistors Brand Nexperia Condition New

Specifications

Country of Origin Malaysia
Brand Nexperia
Height 0.95mm
Length 2.1mm
Model PUMD12,115
Width 1.25mm
Mount Type Surface
Series PUMD12
Maximum Operating Temperature 150°C
Package Type SOT
Minimum Operating Temperature -65°C
Standards/Approvals RoHS
Pin Count 6
Maximum Collector Emitter Voltage Vceo 50V
Minimum DC Current Gain hFE 80
Transistor Polarity NPN + PNP
Maximum Emitter Base Voltage VEBO 10V
Maximum Collector Base Voltage VCBO 50V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 300mW
Maximum DC Collector Current Idc 100mA
Transistor Configuration Dual
Maximum Transition Frequency ft 230MHz

Key Features

  • Maximum DC collector current of 100 mA ensures moderate power handling.
  • Maximum collector emitter voltage of 50 V suits typical low-power switching applications.
  • Built-in 47 kΩ bias resistors simplify circuit design.
  • Dual NPN and PNP transistor configuration provides versatile usage.
  • 300 mW maximum power dissipation supports compact, efficient operation.
  • Surface mount technology in a 6-pin SOT package for space saving.
  • Wide operating temperature range from -65°C to 150°C.
  • AEC-Q101 automotive standard ensures reliability in harsh environments.

Product Description

Nexperia PUMD12,115 resistor-equipped transistor is a dual NPN + PNP transistor designed for space and cost-saving solutions in electronic circuits requiring moderate current and voltage handling. This device integrates 47 kΩ bias resistors internally, reducing component count and simplifying circuit layouts. It features a 100 mA maximum DC collector current and a collector emitter voltage rating of 50 V, making it suitable for switching and amplification in various applications.

Packaged in a compact 6-pin SOT surface-mount device with dimensions of 2.1 mm length, 1.25 mm width, and 0.95 mm height, this transistor offers efficient board space utilization. With a maximum power dissipation of 300 mW, it supports reliable operation under typical low-power conditions.

The device complies with RoHS standards and meets AEC-Q101 automotive quality requirements, ensuring suitability for automotive and industrial applications involving wide temperature ranges from -65°C to 150°C. The dual transistor configuration (NPN + PNP) adds flexibility for designing complementary circuits.

100 mA maximum collector current capacity for moderate loads. Internal bias resistors integrated to reduce external components. Compact 6-pin SOT surface mount package optimized for space saving. Wide operating temperature range from -65°C to 150°C.

RoHS compliant and AEC-Q101 automotive qualified. Maximum collector emitter voltage of 50 V for versatile low power applications. Low power dissipation of 300 mW supports efficient thermal management. NPN + PNP dual transistor configuration for complementary designs.

Compact package with 2.1 mm length, 1.25 mm width, 0.95 mm height.

This resistor-equipped transistor is commonly used in industrial, automotive, and consumer electronics where circuit simplification and board space conservation are critical. It enables designers to create efficient, reliable switching and amplification stages.

Explore more Nexperia Bipolar Transistors on EnvMart for a wide range of semiconductor solutions for electrical and electronic designs.

Nexperia Resistor-Equipped Transistor Dual NPN + PNP 100 mA 50 V 6-Pin SOT PUMD12,115
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Frequently Asked Questions

The maximum DC collector current for this model is 100 mA, making it suitable for moderate power handling applications.

This transistor has a collector emitter voltage rating of 50 V, which is appropriate for typical low-power switching applications.

The maximum power dissipation for this model is 300 mW, supporting efficient thermal management during operation.

The transistor is packaged in a 6-pin SOT configuration with dimensions of 2.1 mm in length, 1.25 mm in width, and 0.95 mm in height.

It operates within a wide temperature range from -65°C to 150°C, making it suitable for various environments.

This model features a dual configuration of NPN + PNP transistors, providing versatility in circuit design.

Yes, it complies with RoHS standards and meets the AEC-Q101 automotive quality requirements, ensuring reliability in automotive applications.

The minimum DC current gain (hFE) for this device is 80, which is beneficial for amplification applications.

The maximum transition frequency (ft) for this model is 230 MHz, allowing for effective switching capabilities.

This device utilizes surface mount technology, which helps save space on printed circuit boards.

This model integrates 47 kΩ bias resistors internally, which reduces the component count and simplifies circuit layouts.

The country of origin for this transistor is Malaysia.

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