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ROHM Dual PNP Bipolar Transistor, -150 mA Collector Current, -50 V Collector Emitter Voltage, 6-Pin UMT Package UMT1NTN

Category Bipolar Transistors Brand ROHM Condition New

Specifications

Country of Origin Philippines
Brand ROHM
Height 0.5mm
Length 1.6mm
Model UMT1NTN
Width 1.2mm
Mount Type Surface
Maximum Operating Temperature 150°C
Package Type UMT
Standards/Approvals RoHS
Pin Count 6
Maximum Collector Emitter Voltage Vceo -50V
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO 6V
Maximum Collector Base Voltage VCBO 60V
Maximum Power Dissipation Pd 150mW
Maximum DC Collector Current Idc -150mA
Transistor Configuration Isolated
Maximum Transition Frequency ft 140MHz

Key Features

  • Dual PNP transistor configuration provides efficient bipolar transistor operation.
  • 6-Pin UMT surface mount package ensures easy PCB integration.
  • Maximum power dissipation of 150 mW supports moderate power applications.
  • Maximum operating temperature up to 150° Celsius for reliable performance.
  • High transition frequency of 140 MHz suitable for high-speed switching.
  • Surface mount package type UMT for compact circuit design.
  • Isolated transistor configuration allows for versatile circuit layouts.
  • Complies with RoHS standards ensuring environmental safety.

Product Description

ROHM UMT1NTN is a dual PNP bipolar transistor integrated within a compact 6-Pin UMT surface mount package. This transistor features a maximum DC collector current of -150 mA and a maximum collector emitter voltage of -50 V, making it suitable for electronic circuits requiring moderate voltage and current handling.

The transistor configuration is isolated and optimized for reliable operation in various semiconductor applications. The device is designed to dissipate up to 150 mW of power and handle maximum operating temperatures of 150° Celsius, facilitating robust performance in demanding environments.

With a transition frequency of 140 MHz, this transistor supports high-frequency switching, beneficial for signal amplification and switching applications in consumer electronics, industrial equipment, and communication devices.

The 6-Pin UMT package offers a surface mount mount type that is space-saving and ideal for modern printed circuit board layouts. The compact dimensions of length 1.6 mm, width 1.2 mm, and height 0.5 mm ensure integration into densely packed electronics.

The transistor meets RoHS compliance standards, underscoring its environmentally friendly production and usage. It is reliably manufactured in the Philippines, maintaining high-quality standards expected from ROHM Semiconductor.

Dual PNP transistor configuration provides efficient bipolar transistor operation. 6-Pin UMT surface mount package ensures easy PCB integration. Maximum power dissipation of 150 mW supports moderate power applications. Maximum operating temperature up to 150° Celsius for reliable performance.

High transition frequency of 140 MHz suitable for high-speed switching. Surface mount package type UMT for compact circuit design. Isolated transistor configuration allows for versatile circuit layouts. Complies with RoHS standards ensuring environmental safety.

Compact dimensions: length 1.6 mm, width 1.2 mm, height 0.5 mm. Manufactured in Philippines ensuring quality and reliability.

This transistor is widely used in industrial electronic assemblies, telecommunications equipment, consumer electronics, and other semiconductor applications requiring small form factor Bipolar Transistors with moderate voltage and current ratings.

Explore more in our Bipolar Transistor category for ROHM and similar electronic components designed to meet various industry requirements with precision and reliability.

ROHM Dual PNP Bipolar Transistor, -150 mA Collector Current, -50 V Collector Emitter Voltage, 6-Pin UMT Package UMT1NTN
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Frequently Asked Questions

The maximum DC collector current for the UMT1NTN transistor is -150 mA.

The maximum collector emitter voltage for this transistor is -50 V.

This model has a transition frequency of 140 MHz, making it suitable for high-speed switching applications.

The dimensions of the UMT1NTN are 1.6 mm in length, 1.2 mm in width, and 0.5 mm in height.

The maximum power dissipation for the UMT1NTN is 150 mW.

The maximum operating temperature for this model is 150° Celsius.

The UMT1NTN is housed in a 6-Pin UMT surface mount package, which is designed for easy PCB integration.

This model features an isolated transistor configuration, allowing for versatile circuit layouts.

The UMT1NTN complies with RoHS standards, ensuring environmental safety in its production and usage.

The maximum emitter base voltage (VEBO) for the UMT1NTN is 6 V.

This transistor is suitable for applications in consumer electronics, telecommunications equipment, and industrial electronic assemblies.

The maximum collector base voltage (VCBO) for this model is 60 V.

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