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| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Model | MUN5312DW1T1G |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-363 (SC-88) |
| Standards/Approvals | Pb-Free, RoHS |
| Pin Count | 6 |
| Maximum Continuous Collector Current Ic | 100mA |
| Maximum Collector Emitter Voltage Vceo | 50V |
| Minimum DC Current Gain hFE | 60 |
| Transistor Polarity | NPN + PNP |
| Maximum Collector Emitter Saturation Voltage VceSAT | 0.25V |
| Maximum Collector Base Voltage VCBO | 50V |
| Automotive Standard | AEC-Q101 |
| Transistor Configuration | Isolated |
| Nexperia Digital Transistor, 100 mA NPN + PNP, 50 V, 6-Pin UMTBrand | Nexperia |
The onsemi MUN5312DW1T1G digital transistor is a dual resistor-equipped bipolar transistor designed for efficient switching applications in electronic circuits. Packaged in a compact SOT-363 (SC-88) surface mount package, this 6-pin device integrates two digital transistors with built-in resistors, enabling direct interfacing with digital logic signals without additional external components.
This transistor offers a maximum collector emitter voltage (Vceo) of 50 V and a maximum continuous collector current of 100 mA, making it ideal for low power control and amplification tasks. The low collector emitter saturation voltage (VceSAT) of 0.25 V helps improve overall efficiency and reduces power loss.
The MUN5312DW1T1G features an isolated transistor configuration with NPN and PNP polarity, allowing flexible circuit designs. It maintains stable performance with a minimum DC current gain (hFE) of 60 and operates reliably up to 150°C, suitable for demanding industrial and automotive electronic applications. Compliance with RoHS and Pb-Free directives ensures environmental compliance, while meeting the rigorous AEC-Q101 automotive standard certifies its suitability for automotive system integration.
This digital transistor is widely used in industrial automation, signal switching, and embedded systems where compact, reliable, and easy-to-drive semiconductor devices are required. Its surface-mount form factor facilitates automated assembly and high-density circuit designs.
Maximum collector emitter voltage: 50 V. Maximum continuous collector current: 100 mA. Transistor polarity: NPN + PNP. Package type: SOT-363 (SC-88), 6-pin surface mount. Maximum operating temperature: 150°C. Minimum DC current gain (hFE): 60.
Complies with RoHS and Pb-Free standards. Meets automotive AEC-Q101 standard. Explore more high-quality semiconductor components like the onsemi MUN5312DW1T1G Digital Transistor at EnvMart to meet your industrial and automotive electronic design needs.
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