World's First Climate Tech Platform | Free Delivery in India | Global Shipping

Become Seller

For Bulk Enquiry: sales@envmart.com

Shopping Cart $0.00

STMicroelectronics Darlington PNP Transistor 2 A 100 V 200 hFE TO-252 Surface Mount MJD117T4

Free Delivery in India | Lowest Global Shipping Charges

STMicroelectronics Darlington PNP Transistor 2 A 100 V 200 hFE TO-252 Surface Mount MJD117T4

Name: STMicroelectronics Darlington PNP Transistor 2 A 100 V 200 hFE TO-252 Surface Mount MJD117T4
Brand: STMicroelectronics
SKU: 211567
Price: 0.53 USD
Availability: InStock



Category Darlington Transistor Brand STMicroelectronics Condition New

Specifications

Country of Origin	India
Brand	STMicroelectronics
Height	2.4mm
Length	6.6mm
Model	MJD117T4
Mount Type	Surface
Series	MJD117
Maximum Operating Temperature	150°C
Package Type	TO-252
Minimum Operating Temperature	-65°C
Pin Count	3
Maximum Continuous Collector Current Ic	2A
Maximum Collector Emitter Voltage Vceo	100V
Number of Elements per Chip	1
Minimum DC Current Gain hFE	200
Transistor Polarity	PNP
Maximum Emitter Base Voltage VEBO	5V
Maximum Collector Emitter Saturation Voltage VceSAT	2V
Maximum Collector Base Voltage VCBO	100V
Maximum Collector Cut-off Current	0.02mA
Maximum Power Dissipation Pd	20W
STMicroelectronics MJD117T4 1 Darlington Transistor PNP, 2 A 100 V HFE	200, 3-Pin DPAK

Key Features

Maximum continuous collector current of 2 amperes.
Collector-emitter voltage rated at 100 volts.
Minimum DC current gain (hFE) of 200 ensures strong amplification.
Package type is TO-252 with surface mount technology.
Operates reliably between -65°C and 150°C.
Power dissipation rating up to 20 watts.
3-pin configuration optimized for efficient circuit integration.
Maximum collector saturation voltage of 2 volts for reduced losses.

Product Description

STMicroelectronics MJD117T4 is a Darlington PNP transistor designed for robust amplification in various electronic circuits. Rated for a maximum continuous collector current of 2 amps and collector-emitter voltage of 100 volts, it is suitable for power applications demanding reliable switching and amplification.

This transistor features a high current gain (hFE) of at least 200, ensuring strong signal amplification. It is housed in a TO-252 surface mount package with a compact 3-pin design, enabling efficient PCB layout and heat dissipation. The device supports a maximum power dissipation of 20 watts and can operate under harsh temperature ranges from -65°C up to 150°C.

The maximum collector saturation voltage is 2 volts, which minimizes power losses during operation. An emitter-base voltage limit of 5 volts safeguards the device against harmful voltage spikes.

The MJD117T4 transistor is used widely in industrial electronics, power management, and discrete semiconductor applications where durable, high-performance transistors are required. It is ideal for use in amplification stages, switching circuits, and other semiconductor assemblies in electronics manufacturing and engineering.

Maximum continuous collector current of 2 amperes. Collector-emitter voltage rating of 100 volts. High DC current gain (hFE) of 200. TO-252 surface mount package with 3 pins. Operating temperature range from -65°C to 150°C.

Power dissipation up to 20 watts. Compact dimensions for space-saving PCB designs. Maximum collector saturation voltage of 2 volts. Emitter-base voltage maximum of 5 volts.

This transistor belongs to the MJD117 series and aligns with industrial electronics standards. For engineers and manufacturers, this transistor offers a reliable solution for power and signal amplification tasks.

Browse the Electronics & Electricals category at EnvMart for other semiconductors and discrete transistor options.

Explore more products in our Darlington Transistor category.