$0.24
$0.23
Tax included
Previous
Next
Share
Free Delivery in India | Lowest Global Shipping Charges
24/7 Customer Support
Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries
Save up to 28% with GST Input
Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries
# Lowest Price Challenge
If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon
100% Original Products
Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase
ROHM N-Channel MOSFET 3.5 A, 30 V Enhancement Mode, 3-Pin Surface Mount TSMT Package RQ5E035BNTCL
Specifications
| Country of Origin | India |
|---|---|
| Brand | ROHM |
| Height | 950μm |
| Length | 3mm |
| Model | RQ5E035BNTCL |
| Width | 1.8mm |
| Mount Type | Surface |
| Series | RQ5E035BN |
| Maximum Operating Temperature | 150°C |
| Package Type | TSMT |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 3.5A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 56mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1W |
| Typical Gate Charge Qg @ Vgs | 6nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.2V |
Key Features
- Features enhancement mode operation for efficient switching performance.
- Maximum power dissipation rated at 1 W for reliable thermal management.
- Operates within a temperature range of -55°C to 150°C, suitable for diverse industrial applications.
- Has a low maximum drain-source resistance of 56 mΩ, reducing conduction losses.
- Typical gate charge Qg of 6 nC at Vgs, facilitating fast switching speeds.
- Handles maximum gate-source voltages from -20 V to +20 V, ensuring operational safety.
- Forward voltage drop of 1.2 V minimizes power loss during conduction.
- TSMT package type enables surface mounting for automated PCB assembly.
Product Description
The ROHM RQ5E035BNTCL is a high-performance N-Channel MOSFET transistor designed for electronic, industrial, and power management applications. This enhancement mode MOSFET supports a maximum continuous drain current of 3.5 A, and a drain-source voltage rating of 30 V, making it ideal for switching and amplification tasks in compact electronic circuits.
Housed in a small 3-pin TSMT surface mount package, this MOSFET offers a low on-resistance of 56 mΩ, which minimizes conduction losses and improves overall circuit efficiency. Its low gate charge of 6 nC at the gate-source voltage allows for quick switching, suitable for high-speed digital and analog circuits.
Operating across a wide temperature range from -55°C to 150°C, this device is capable of functioning reliably in harsh environments common in automotive, industrial, and consumer electronics sectors. The device package dimensions are 3 mm (length), 1.8 mm (width), and 950 μm (height), supporting integration in compact circuit board layouts.
The ROHM RQ5E035BNTCL features forward voltage of 1.2 V and accommodates gate voltages from -20 V to +20 V, providing ample margin for practical circuit designs and ensuring robust operation and switching integrity.
Key features such as surface mount TSMT packaging and 3-pin configuration support automated PCB assembly processes, aiding manufacturers in improving production efficiency and reducing assembly costs.
Enhancement mode operation for high switching performance. 1 W maximum power dissipation for thermal stability. Wide operating temperature range (-55°C to 150°C). Low on-resistance of 56 mΩ to minimize power loss. Compact TSMT surface mount packaging.
Fast switching with typical gate charge of 6 nC. Gate-source voltage rating: -20 V to +20 V. Forward voltage drop of 1.2 V reduces conduction losses. 3-pin configuration supports circuit compactness. Dimensions suitable for dense PCB designs.
This MOSFET is suitable for diverse industrial, automotive, consumer electronics, and power management applications where robust, reliable, and efficient semiconductor devices are required.
EnvMart offers this ROHM MOSFET to support your electronic design and production needs with trusted quality and consistent performance.
Looking to purchase in bulk?
- Purchase item in bulk quantity
- Get best price for your business
Frequently Asked Questions
The maximum continuous drain current for this model is 3.5 A.
It has a maximum drain-source voltage rating of 30 V.
The typical gate charge at Vgs is 6 nC.
The maximum power dissipation is rated at 1 W.
It operates within a temperature range of -55°C to 150°C.
The maximum gate-source voltage is from -20 V to +20 V.
The dimensions of the TSMT package are 3 mm in length, 1.8 mm in width, and 950 μm in height.
The forward voltage drop is 1.2 V.
The maximum drain-source resistance is 56 mΩ, which helps minimize conduction losses.
This model supports surface mounting, specifically in a TSMT package.
It features a 3-pin configuration.
This MOSFET is suitable for electronic, industrial, automotive, and power management applications.
Related Products
$0.97
$0.94
-3%
New
Other Products from this brand
$3.31
$3.21
-3%
New
$3.62
$3.51
-3%
New
$4.03
$3.91
-3%
New
$0.23
$0.22
-3%
New
$0.24
$0.23
Save 3%
Tax included
Quantity
Global Payments 140+ Countries
Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP World
24/7 Customer Support Email/Chat/Telephonic Support
Comments (0)
Your review appreciation cannot be sent
Report comment
Report sent
Your report cannot be sent