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ROHM P-Channel MOSFET, Enhancement Mode, 3.5 A Continuous Drain Current, 30 V Drain Source Voltage, 3-Pin SC-96 RQ5E035AT
Specifications
| Country of Origin | India |
|---|---|
| Brand | ROHM |
| Height | 950μm |
| Length | 3mm |
| Model | RQ5E035AT |
| Width | 1.8mm |
| Mount Type | Surface |
| Series | RQ5E035AT |
| Maximum Operating Temperature | 150°C |
| Package Type | SC-96 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 3.5A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 70mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1W |
| Typical Gate Charge Qg @ Vgs | 10nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -1.2V |
Key Features
- Designed as an enhancement mode device for efficient switching.
- Package type SC-96 with 3 pins optimized for surface mount technology.
- Maximum drain source resistance of 70 milliohms ensures low conduction losses.
- Maximum power dissipation of 1 watt suitable for low power applications.
- Operational temperature range from -55°C to 150°C for reliable performance.
- Typical gate charge of 10 nC at gate-source voltage for fast switching response.
- Supports a gate source voltage range of -20 to +20 volts for versatile control.
- Compact dimensions with 3 mm length, 1.8 mm width, and 950 μm height.
Product Description
The ROHM RQ5E035AT is a P-Channel MOSFET transistor designed for applications requiring moderate power switching with a maximum continuous drain current of 3.5 A and a drain-source voltage rating of 30 V. This enhancement-mode device is packaged in a compact 3-pin SC-96 surface mount form factor.
Its maximum drain-source resistance of 70 mΩ enables efficient conduction with minimal losses, making it suitable for a variety of low power electronic applications. The device can dissipate up to 1 watt of power and withstand operating temperatures ranging from -55°C to 150°C, offering wide environmental compatibility.
The typical gate charge of 10 nC at a specified gate-source voltage ensures rapid switching capabilities, improving circuit efficiency. Furthermore, the device supports a maximum gate-source voltage range of -20 to +20 V, providing flexibility in gate drive conditions.
Physical dimensions include a length of 3 mm, width of 1.8 mm, and height of 950 μm, which supports integration into compact PCB designs. This MOSFET does not have automotive certification but meets standard semiconductor quality criteria.
Designed as an enhancement mode device for efficient switching. Package type SC-96 with 3 pins optimized for surface mount technology. Maximum drain source resistance of 70 milliohms ensures low conduction losses. Maximum power dissipation of 1 watt suitable for low power applications.
Operational temperature range from -55°C to 150°C for reliable performance. Typical gate charge of 10 nC at gate-source voltage for fast switching response. Supports a gate source voltage range of -20 to +20 volts for versatile control.
Compact dimensions with 3 mm length, 1.8 mm width, and 950 μm height.
This ROHM MOSFET is commonly used in industrial electronics, power management circuits, and semiconductor applications, helping engineers achieve efficient, reliable switching performance. It is suited to construction of power control circuits, signal amplification, and electronic device protection circuits in manufacturing and laboratory settings.
Explore more ROHM MOSFETs and semiconductor products on EnvMart to find components tailored to your electronic project needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 3.5 A.
This MOSFET has a maximum drain-source voltage rating of 30 V.
It operates within a temperature range of -55°C to 150°C.
The device is packaged in an SC-96 type with 3 pins.
The maximum power dissipation for this model is 1 watt.
The typical gate charge is 10 nC at the specified gate-source voltage.
It supports a maximum gate-source voltage range of -20 to +20 V.
The dimensions of this model are 3 mm in length, 1.8 mm in width, and 950 μm in height.
The maximum drain-source resistance is 70 milliohms.
This device features a P-channel type.
It is commonly used in industrial electronics, power management circuits, and semiconductor applications.
This model is optimized for surface mount technology.
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