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Nexperia Silicon Junction Switching Diode 2-Pin SOD-523 215 mA 100 V BAS516,115

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Nexperia Silicon Junction Switching Diode 2-Pin SOD-523 215 mA 100 V BAS516,115

Name: Nexperia Silicon Junction Switching Diode 2-Pin SOD-523 215 mA 100 V BAS516,115
Brand: Nexperia
SKU: 194668
Price: 0.04 USD
Availability: InStock

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Category Switching Diodes Brand Nexperia Condition New

Specifications

Country of Origin	China
Brand	Nexperia
Height	0.65mm
Length	1.25mm
Model	BAS516,115
Width	0.85mm
Mount Type	Surface
Series	BAS516
Maximum Operating Temperature	150°C
Package Type	SOD-523
Sub Type	Silicon Junction
Minimum Operating Temperature	-65°C
Pin Count	2
Maximum Power Dissipation Pd	500mW
Diode Configuration	Single
Peak Non-Repetitive Forward Surge Current Ifsm	4A
Maximum Forward Voltage Vf	1.25V
Peak Reverse Recovery Time trr	4ns
Maximum Forward Current If	215mA
Maximum Peak Reverse Repetitive Voltage Vrrm	100V
Reverse voltage	VR ≤ 100 V
Repetitive peak reverse voltage	VRRM ≤ 100 V
onsemi Switching Diode, Single, 200 mA, 2-Pin 100 V SOD-523 BAS16XV2T1GBrand	onsemi

Key Features

Supports fast switching with a peak reverse recovery time of 4 ns.
Maximum forward current rating of 215 mA enables efficient general-purpose switching.
Maximum power dissipation of 500 mW suitable for various electronics applications.
Wide operating temperature range from -65°C to 150°C ensures reliability in harsh environments.
Low forward voltage drop of 1.25 V minimizes power loss.
Package type SOD-523 encapsulated for high-density circuit designs.
Peak non-repetitive surge current rating of 4 A for transient conditions.
Repetitive peak reverse voltage rating of up to 100 V offers robust performance.

Product Description

Nexperia BAS516,115 is a silicon junction switching diode designed for high-speed switching applications. This diode features a maximum forward current of 215 mA and can withstand a peak repetitive reverse voltage of 100 V. Packaged in a compact 2-pin SOD-523 surface mount device, it supports customized high-density circuit designs.

With a fast peak reverse recovery time of only 4 nanoseconds, this switching diode is ideal for general-purpose switching tasks in various electronic circuits. The device has a maximum power dissipation of 500 mW and operates reliably within a wide temperature range from -65°C to 150°C, making it suitable for both industrial and commercial applications.

The diode exhibits a low forward voltage drop of 1.25 V to enhance efficiency and has a peak non-repetitive forward surge current rating of 4A, which makes it robust for transient and surge events. Its compact dimensions of 1.25 mm length, 0.85 mm width, and 0.65 mm height facilitate integration in space-constrained PCB layouts.

This diode is produced in China by Nexperia and conforms to the BAS516 series standards. It is targeted at applications requiring fast switching speeds, such as power management, signal processing, and switching regulators in industrial electronics, manufacturing equipment, and telecommunications devices.

Supports fast switching with a peak reverse recovery time of 4 ns. Maximum forward current rating of 215 mA enables efficient general-purpose switching. Compact SOD-523 surface mount package for high-density circuit boards.

Wide operating temperature range from -65°C to 150°C ensures durability. Low forward voltage of 1.25 V reduces power loss and heat generation. Maximum power dissipation of 500 mW. Peak non-repetitive forward surge current of 4 A for transient resilience.

Repetitive peak reverse voltage of 100 V. Small dimensions support miniaturized electronic designs. Applicable for industrial, telecommunications, manufacturing, and general electronic circuits. Explore more high-quality Switching Diodes and semiconductor components at EnvMart.