Nexperia Silicon Junction Switching Diode 2-Pin DO-34 Package, 250 mA, 125 V BAS45A,113

Nexperia BAS45A,113 Silicon Junction Switching Diode is a small signal diode designed for electronic and power applications. It supports through-hole mounting in a DO-34 package and offers a maximum forward current of 250 mA and a peak repetitive reverse voltage of 125 V. This diode is optimized for high switching speeds and low capacitance, making it suitable for customized high density circuit designs.

The diode features a maximum power dissipation of 300 mW and can operate efficiently between temperatures of -65°C and 175°C. Its compact size, with a length of 3.04 mm, width and height of 1.6 mm, allows easy integration into electronic circuits requiring space efficiency. The maximum forward voltage is 1 V, providing low voltage drop during conduction. The diode also withstands a peak non-repetitive forward surge current of 4 A, enhancing its robustness under transient conditions.

This product is manufactured in China under the BAS45A series by Nexperia, a trusted brand in discrete semiconductors. It is widely utilized in industrial, electronic, and power circuit applications where efficient switching and reliability are critical.

Through-hole DO-34 package ensures ease of mounting and durability. Low leakage current supports high voltage applications. High switching speeds reduce signal distortion in circuits. Compact and robust design suitable for automated assembly.

Wide temperature range makes it applicable in harsh environments. Supports customized circuit designs requiring small signal diodes. Manufactured to strict quality control standards for reliability. Explore more discrete semiconductor and switching diode components on EnvMart, tailored for industrial and electronic design needs.

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