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Nexperia Transistor PNP 4 A, -80 V, 4-Pin UPAK PBSS5480X,135

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Nexperia Transistor PNP 4 A, -80 V, 4-Pin UPAK PBSS5480X,135

Name: Nexperia Transistor PNP 4 A, -80 V, 4-Pin UPAK PBSS5480X,135
Brand: Nexperia
SKU: 193838
Price: 0.41 USD
Availability: InStock

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Category Bipolar Transistors Brand Nexperia Condition New

Specifications

Country of Origin	India
Brand	Nexperia
Height	1.5mm
Length	4.6mm
Model	PBSS5480X,135
Width	2.5mm
Mount Type	Surface
Series	PBSS5480X
Maximum Operating Temperature	150°C
Package Type	UPAK
Minimum Operating Temperature	-65°C
Standards/Approvals	RoHS
Pin Count	4
Maximum Collector Emitter Voltage Vceo	-80V
Minimum DC Current Gain hFE	80
Transistor Polarity	PNP
Maximum Emitter Base Voltage VEBO	5V
Maximum Collector Base Voltage VCBO	80V
Maximum Power Dissipation Pd	2.5W
Maximum DC Collector Current Idc	-4A
Transistor Configuration	Single
Maximum Transition Frequency ft	125MHz
Diodes Inc 2DA1971-7 Transistor, -500 mA PNP, -400 V, 3-Pin SOT-89Brand	DiodesZetex

Key Features

This transistor features low saturation voltage and is designed for efficient switching applications.
It supports a maximum power dissipation of 2.5 W, making it suitable for moderate power applications.
The device operates within a temperature range from -65°C to 150°C.
It has a transition frequency of up to 125 MHz, providing good high-frequency performance.
The transistor is configured as a single PNP type and mounted on surface mount package UPAK.
The compact dimensions are 4.6 mm in length, 2.5 mm in width, and 1.5 mm in height.
This component complies with RoHS standards ensuring it is environmentally compliant.
Used in various electronic and electrical applications requiring reliable bipolar transistors.

Product Description

Nexperia PBSS5480X,135 is a PNP bipolar transistor designed for applications requiring up to -4 A maximum DC collector current and a maximum collector emitter voltage of -80 V. This transistor is housed in a compact 4-Pin UPAK surface mount package optimized for efficient use in digital and switching applications.

The device features a low collector-emitter saturation voltage, which reduces energy loss during operation and improves overall power efficiency. Its power dissipation capacity of 2.5 W allows for moderate load handling while maintaining reliability.

This transistor operates over a broad temperature range from -65°C to 150°C, which makes it suitable for industrial and commercial electronics exposed to varying ambient conditions. The transition frequency of 125 MHz supports high-speed switching in electronic circuits.

The PBSS5480X,135 is a single transistor configuration, PNP polarity type, and designed for surface mounting on printed circuit boards. Its compact size with a length of 4.6 mm, width of 2.5 mm, and height of 1.5 mm allows dense integration in modern electronic assemblies.

Compliant with RoHS standards, it offers an environmentally friendly option for designers. This transistor is ideal for use in a wide range of applications such as power control, signal amplification, and general electronic circuit designs requiring dependable bipolar transistors.

Low saturation voltage for energy-efficient switching performance. Handles up to -4 A collector current and -80 V collector emitter voltage. Compact 4-Pin UPAK package suitable for surface mount technology. Operating temperature from -65°C to 150°C for diverse environments.

Maximum power dissipation of 2.5 W for reliable power handling. High transition frequency of 125 MHz for good switching speed. RoHS compliant ensuring environmental and safety standards. Suitable for various industrial, laboratory, and electronic applications.

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