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Nexperia Silicon Junction Common Cathode Switching Diode 175mA 100V 3-Pin SC-70 BAV70W,115

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Nexperia Silicon Junction Common Cathode Switching Diode 175mA 100V 3-Pin SC-70 BAV70W,115

Name: Nexperia Silicon Junction Common Cathode Switching Diode 175mA 100V 3-Pin SC-70 BAV70W,115
Brand: Nexperia
SKU: 185430
Price: 0.04 USD
Availability: InStock

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Category Switching Diodes Brand Nexperia Condition New

Specifications

Country of Origin	India
Brand	Nexperia
Height	1mm
Length	2.2mm
Model	BAV70W,115
Width	1.35mm
Mount Type	Surface
Series	BAV70
Maximum Operating Temperature	150°C
Package Type	SC-70
Sub Type	Silicon Junction
Minimum Operating Temperature	-65°C
Pin Count	3
Maximum Power Dissipation Pd	200mW
Diode Configuration	Common Cathode
Peak Non-Repetitive Forward Surge Current Ifsm	4A
Maximum Forward Voltage Vf	1.25V
Peak Reverse Recovery Time trr	4ns
Maximum Forward Current If	175mA
Maximum Peak Reverse Repetitive Voltage Vrrm	100V
Reverse voltage	VR ≤ 100 V
Low capacitance	Cd ≤ 1.5 pF
NXP 100V 175mA, Dual Silicon Junction Diode, 3-Pin SC-70 BAV70WBrand	NXP

Key Features

High-speed switching diode with peak reverse recovery time of 4 nanoseconds.
Maximum forward current of 175 milliamps allows low power switching applications.
Packaging in small surface-mount SC-70 plastic package reduces PCB footprint.
Maximum forward voltage of 1.25 volts ensures efficient conduction.
Wide operating temperature range from -65°C to 150°C for robust performance.
Low junction capacitance of up to 1.5 picofarads for minimal circuit disturbance.
Peak repetitive reverse voltage of 100 volts suitable for various electronic circuits.
Maximum power dissipation of 200 milliwatts supports compact designs.

Product Description

Nexperia BAV70W,115 is a silicon junction switching diode with a common cathode configuration designed for high-speed electronic switching applications. It supports a maximum forward current of 175mA and a peak reverse voltage rating of 100V. Encapsulated in a small 3-Pin SC-70 surface mount package, this diode offers a compact solution for space-constrained and efficient circuit designs.

The diode features a fast peak reverse recovery time of 4 nanoseconds which makes it ideal for high-frequency switching and digital logic circuits. Its low junction capacitance of up to 1.5 picofarads helps maintain signal integrity by minimizing parasitic effects.

With a robust operating temperature range of -65°C to 150°C and a maximum power dissipation rating of 200 milliwatts, this diode is suitable for industrial and commercial applications in areas such as telecommunications, consumer electronics, and automotive electronics where reliable and fast switching is essential.

The compact SC-70 package measures approximately 2.2mm in length, 1.35mm in width, and 1mm in height, facilitating high-density PCB layouts. The maximum forward voltage of 1.25 volts assures efficient performance with minimal power loss during conduction.

High-speed switching with trr ≤ 4 ns for efficient circuit switching. Common cathode silicon junction design for dual diode configuration. Surface mount SC-70 package ideal for compact and automated assembly. Maximum forward current rating of 175mA supports low power applications.

Reverse voltage rating of 100 volts suitable for general switching tasks. Maximum power dissipation of 200mW facilitates thermal management. Wide operating temperature for robust industrial usage. Extremely low leakage and capacitance improve circuit performance.

Applications include switching circuits, digital logic gates, signal demodulation, and protection circuits in industrial, laboratory, manufacturing, and commercial electronic systems.

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