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ROHM Infrared Phototransistor Surface Mount 4-Pin, 30mA Collector Current, 30V CE Voltage RPI-0451E
Specifications
| Country of Origin | India |
|---|---|
| Brand | ROHM |
| Height | 5.2mm |
| Length | 7.8mm |
| Model | RPI-0451E |
| Width | 4.2mm |
| Mount Type | Surface |
| Series | RPI |
| Maximum Operating Temperature | 85°C |
| Minimum Operating Temperature | -25°C |
| Number Of Channels | 1 |
| Standards/Approvals | RoHS |
| Number of Pins | 4 |
| Typical Fall Time | 10μs |
| Peak Wavelength | 850nm |
| Spectrums Detected | Infrared |
| Collector Current | 30mA |
| Maximum Light Current | 10000μA |
| Maximum Dark Current | 0.5μA |
| Collector Emitter Voltage | 30V |
| Emitter Collector Voltage | 4.5V |
Key Features
- Operates at a peak wavelength of 850nm for optimal infrared sensitivity.
- Features a typical rise and fall time of 10 microseconds for fast response.
- Maximum collector current rating of 30mA ensures stable operation.
- Supports operating temperature range from -25°C to 85°C for reliability in diverse environments.
- Mount type is surface, facilitating easy and accurate PCB mounting.
- Meets RoHS standards for environmental safety.
- Low maximum dark current of 0.5 microamperes minimizes noise in circuits.
- Collector emitter voltage is rated at 30 volts allowing robust application use.
Product Description
The ROHM RPI-0451E infrared phototransistor is a high-performance, surface mount phototransistor designed for precise infrared light sensing in electronic and industrial applications. This 4-pin phototransistor operates optimally at a peak wavelength of 850nm, making it suitable for use in optoelectronic circuits requiring rapid and accurate infrared detection.
The device exhibits fast switching characteristics with typical rise and fall times of 10 microseconds, supporting high-speed applications. Its maximum collector current of 30mA and collector emitter voltage rating of 30 volts allow for reliable functionality within a broad range of circuits.
Designed to fit compact PCB layouts, the RPI-0451E measures 7.8mm in length, 5.2mm in height, and 4.2mm in width, providing flexibility in space-limited assemblies. The surface mount design ensures high mounting accuracy and ease of installation.
With an operating temperature range from -25°C to 85°C, this phototransistor can sustain performance under challenging environmental conditions. Furthermore, it complies with RoHS standards, supporting environmentally responsible manufacturing processes.
Typical use cases include applications in electronic components, power and connectors, optocouplers, photodetectors, and other industrial electronic sensing solutions. The device's low maximum dark current of 0.5 microamperes assists in maintaining signal clarity by reducing noise.
Operates at peak wavelength of 850nm for infrared detection. Fast typical rise and fall times of 10μs for quick response. Maximum collector current of 30mA supporting robust circuit integration. Compact dimensions suitable for surface mount PCB applications.
Wide operating temperature range of -25°C to 85°C for durability. RoHS compliant for environmentally safe use. Low dark current reduces signal noise and improves accuracy. Collector emitter voltage of 30V for high tolerance circuits.
4-pin design ensures secure and stable connections.
This ROHM infrared Phototransistor is ideal for industrial, electronics manufacturing, and laboratory use where precise infrared sensing is necessary. It supports integration in various optoelectronic devices, automation equipment, and more.
Explore ROHM products at EnvMart for high quality electronics components that combine performance with reliability and environmental compliance.
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Frequently Asked Questions
The peak wavelength of the ROHM RPI-0451E phototransistor is 850nm, which is optimal for infrared sensitivity.
The maximum collector current rating for the RPI-0451E is 30mA, ensuring stable operation in various applications.
This phototransistor operates within a temperature range of -25°C to 85°C, allowing it to function reliably in diverse environments.
The dimensions of the RPI-0451E are 7.8mm in length, 5.2mm in height, and 4.2mm in width, making it suitable for compact PCB layouts.
The typical rise and fall time of the RPI-0451E is 10 microseconds, which supports fast response in applications.
The collector emitter voltage rating for the RPI-0451E is 30 volts, allowing for robust application use.
This model features a surface mount design, facilitating easy and accurate PCB mounting.
The RPI-0451E complies with RoHS standards, ensuring it meets environmental safety requirements.
The maximum dark current for the RPI-0451E is 0.5 microamperes, which helps minimize noise in circuits.
The RPI-0451E has 4 pins, ensuring secure and stable connections in electronic circuits.
This phototransistor is suitable for applications in electronic components, optocouplers, and photodetectors, among others.
The maximum light current for the RPI-0451E is 10,000 microamperes, supporting its use in various optoelectronic applications.
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