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ROHM N-Channel MOSFET 10.5 A 60 V Enhancement Mode 8-Pin SOP SH8KC7TB1

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ROHM N-Channel MOSFET 10.5 A 60 V Enhancement Mode 8-Pin SOP SH8KC7TB1

Name: ROHM N-Channel MOSFET 10.5 A 60 V Enhancement Mode 8-Pin SOP SH8KC7TB1
Brand: ROHM
SKU: 173681
Price: 1.69 USD
Availability: InStock

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Category MOSFET Brand ROHM Condition New

Specifications

Country of Origin	India
Brand	ROHM
Height	5.2mm
Length	4.05mm
Model	SH8KC7TB1
Width	1.75mm
Mount Type	Surface
Maximum Operating Temperature	150°C
Package Type	SOP
Minimum Operating Temperature	-55°C
Pin Count	8
Channel Type	N
Maximum Continuous Drain Current Id	10.5A
Maximum Drain Source Voltage Vds	60V
Maximum Drain Source Resistance Rds	12.4mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	2W
Typical Gate Charge Qg @ Vgs	22nC
Maximum Gate Source Voltage Vgs	20V
Forward Voltage Vf	1.2V

Key Features

Features low on-resistance for efficient power switching.
Configured with enhancement mode channel operation.
Supports a maximum gate-source voltage of 20 V.
Compact 8-pin SOP surface mount package for space saving.
Operates reliably within temperature range of -55°C to 150°C.
Maximum power dissipation rated at 2 W.
Offers typical gate charge of 22 nC at Vgs.
Forward voltage of 1.2 V ensures efficient signal conduction.

Product Description

ROHM SH8KC7TB1 is an N-Channel MOSFET engineered for industrial and electronic applications requiring robust switching performance and efficient power management. This 8-pin SOP surface mount device withstands a maximum continuous drain current of 10.5 A and a maximum drain-source voltage of 60 V, suitable for a range of power semiconductor applications.

Featuring enhancement mode channel operation and a low on-resistance of approximately 12.4 milliohms, this MOSFET minimizes conduction losses, thereby improving efficiency in power circuits. The device supports a maximum gate-source voltage of 20 V and has a forward voltage drop of 1.2 V, providing reliable switching characteristics.

Designed for durability, it operates effectively across a wide temperature range from -55°C to 150°C, making it suitable for harsh industrial and commercial environments. The maximum power dissipation capability is 2 W, which aligns with typical heat management requirements in compact electronic assemblies.

The package type is surface mount 8-pin SOP, offering a small footprint with dimensions of 4.05 mm length, 1.75 mm width and 5.2 mm height, enabling high-density PCB layouts and advanced circuit miniaturization.

This ROHM MOSFET is lead (Pb) free and halogen free, complying with environmental standards for safer electronic manufacturing and disposal. Its robust features make it an excellent choice for industrial automation, power management modules, and switching control in electronic devices.

Features low on-resistance for efficient power switching. Configured with enhancement mode channel operation. Supports a maximum gate-source voltage of 20 V. Compact 8-pin SOP surface mount package for space saving. Operates reliably within temperature range of -55°C to 150°C.

Maximum power dissipation rated at 2 W. Offers typical gate charge of 22 nC at Vgs. Forward voltage of 1.2 V ensures efficient signal conduction. Pb-free and halogen free plating compliant. Explore more MOSFETs and semiconductor components from ROHM to optimize your electronic and industrial applications with reliable power control solutions on EnvMart.