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ROHM N-Channel Enhancement MOSFET 3 A 800 V 3-Pin TO-220FM R8003KNXC7G
Specifications
| Country of Origin | India |
|---|---|
| Brand | ROHM |
| Height | 29.87mm |
| Length | 10.3mm |
| Model | R8003KNXC7G |
| Width | 5mm |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220FM |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 3A |
| Maximum Drain Source Voltage Vds | 800V |
| Maximum Drain Source Resistance Rds | 1.8Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 36W |
| Typical Gate Charge Qg @ Vgs | 11.5nC |
| Maximum Gate Source Voltage Vgs | 20V |
Key Features
- Equipped with 3 pins in a TO-220FM package suitable for through-hole mounting.
- Features a maximum drain-source resistance of 1.8 ohms enabling efficient conduction.
- High power dissipation of up to 36 W for robust operation in demanding applications.
- Operates reliably within a wide temperature range of -55°C to 150°C.
- Supports a maximum gate-source voltage of 20 V ensuring reliable switching performance.
- Typical gate charge of 11.5 nC at 11 V gate-source voltage for fast switching.
- Built-in enhancement channel mode providing high-speed switching capabilities.
- RoHS compliant and Pb-free plating for environmental safety.
Product Description
ROHM R8003KNXC7G is a N-Channel Enhancement MOSFET designed for high-speed switching applications with a maximum continuous drain current of 3 A and a drain-source voltage of 800 V. Packaged in a 3-pin TO-220FM form factor, this device supports through-hole mounting enabling effective mechanical and thermal management.
This MOSFET features a low maximum drain-source resistance of 1.8 ohms, which helps reduce power loss and improve efficiency. It exhibits a maximum power dissipation rating of 36 W, allowing for use in moderately high power industrial and electronic circuits. The device operates reliably across an extensive temperature range from -55°C up to 150°C, making it suitable for various harsh environments.
The gate-source voltage is rated up to 20 V, supporting reliable switching with a typical gate charge of 11.5 nC at 11 V gate-source voltage, facilitating high-speed switching performance in power management applications such as power factor correction (PFC) and LLC resonant converters.
The ROHM R8003KNXC7G utilizes the super junction MOSFET technology to achieve low on-resistance and ultra-fast switching speeds, enhancing efficiency and enabling parallel operation for scalability in power electronics systems.
3-pin TO-220FM packaging for ease of mounting and heat dissipation. Low on-resistance and high-speed switching suitable for power supplies and industrial electronic circuits. Wide operating temperature range from -55°C to 150°C for industrial-grade reliability.
Maximum drain current of 3 A and maximum drain-source voltage of 800 V. Typical gate charge of 11.5 nC ensuring fast switch transition. Pb-free plating and RoHS compliance support environmental standards. Designed for PFC, LLC circuit efficiency improvements.
This MOSFET is ideal for applications in power electronics, industrial controls, motor drives, and other environments requiring efficient and reliable high-speed switching components.
EnvMart offers this ROHM N-Channel Enhancement MOSFET with comprehensive technical support and quality assurance, enabling smooth integration into your industrial and laboratory electronic systems.
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Frequently Asked Questions
The maximum continuous drain current for this model is 3 A.
This MOSFET has a maximum drain-source voltage of 800 V.
It features a maximum power dissipation rating of 36 W.
The typical gate charge at 11 V gate-source voltage is 11.5 nC.
This model is packaged in a TO-220FM form factor suitable for through-hole mounting.
The maximum gate-source voltage supported is 20 V.
It operates reliably within a wide temperature range of -55°C to 150°C.
This MOSFET has a total of 3 pins.
The maximum drain-source resistance is 1.8 ohms.
It is designed for high-speed switching applications, including power factor correction and LLC resonant converters.
The dimensions are 29.87 mm in height, 10.3 mm in length, and 5 mm in width.
Yes, it is RoHS compliant and features Pb-free plating for environmental safety.
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